Less-conventional low-consumption galvanic separated MOSFET-IGBT gate drive supply [PDF]
, 2017 A simple half-bridge, galvanic separated power supply which can be short circuit proof is proposed for gate driver local supplies. The supply is made while hacking a common mode type filter as a transformer, as the transformer shows a good insulation, it
Bikorimana, Jean Marie Vianney +1 more
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An On-line Diagnostic Method for Open-circuit Switch Faults in NPC Multilevel Converters [PDF]
, 2016 On-line condition monitoring is of paramount importance for multilevel converters used in safety-critical applications. A novel on-line diagnostic method for detecting open-circuit switch faults in neutral-point-clamped (NPC) multilevel converters is ...
Demerdash, Nabeel, He, Jiangbiao
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Mechanical Stress Analysis in High Power Press Pack IGBT
Zhongguo dianli, 2020 Mechanical stress is one of the key factors affecting the electrical characteristics, thermal characteristics and reliability of high-voltage high-power press-pack IGBT devices.
Xinling TANG +7 more
doaj +1 more source
Research on the Gate Oxide Layer Aging Trend of Power Electronic Device
IEEE Access, 2021 The introduction of fully electric vehicles (FEVs) into the mainstream has raised concerns about the reliability of their electronic components such as Insulated Gate Bipolar Translator (IGBT).
Guoqing Xu +4 more
doaj +1 more source
Thermo-mechanical stress of bonded wires used in high power modules with alternating and direct current modes [PDF]
, 2012 Today, power electronic reliability is a main subject of interest for many companies and laboratories. The main process leading to the IGBT failure is the cycling thermal stress.
Medjahed, Hassen +2 more
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Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter
Micromachines, 2023 In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics.
Wei Wu +5 more
doaj +1 more source
Analysis and hardware testing of cell capacitor discharge currents during DC faults in half-bridge modular multilevel converters [PDF]
, 2015 This paper focuses on the behaviour of the cell capacitor discharge currents during DC faults in half-bridge modular multilevel converters. Active switches, not designed for fault conditions, are tripped to minimize discharge currents effect on the ...
Aboushady, A.A., Ahmed, K.H., Jovcic, D.
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Power loss investigation in HVDC for cascaded H-bridge multilevel inverters (CHB-MLI) [PDF]
, 2015 In the last decade, the use of voltage-source multilevel inverters in industrial and utility power applications has been increased significantly mainly due to the many advantages of multilevel inverters, compared to conventional two level inverters ...
Alamri, B, Darwish, M
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Доклады Белорусского государственного университета информатики и радиоэлектроникиThis work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
doaj +1 more source
Influence of Package Parasitic Parameters on Transient Current Distribution of Paralleled IGBT Chips
Zhongguo dianli, 2019 High power IGBT usually use multiple chips in parallel to achieve large current. The consistency of the dynamic and static current distribution of parallel chips is essential to improve the current level and reliability of devices.At first, the ...
Hao SHI +5 more
doaj +1 more source