Results 101 to 110 of about 11,875 (232)
A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch-Based Power Converters [PDF]
, 2017 : Hybrid switches configured by paralleling Silicon (Si) Insulated Gate Bipolar Transistors (IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFET) have been verified to be a high-efficiency cost-effective device ...
He, Jiangbiao +2 more
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Switching Characteristic of HiPak 6.5 kV IGBT and the Influence of Gate Unit
Kongzhi Yu Xinxi Jishu, 2015 It presented the investigation on the reverse recovery of ABB HiPak 6 500 V/750 A IGBT module. For the first time, the forward recovery and the reverse recovery of diode and its anti-parallel connected IGBT were researched as a function of di/dt, and the
Makan Chen, Raffael Schnell
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Estimation on the switching losses at IGBT bridges power converter [PDF]
, 2011 . In the paper estimation on the switching losses at IGBT bridge converter with the output serial resonant load is given. The converter works on frequency higher than resonant frequency and supports the work of IGBT transistors in the bridge with zero ...
Cundev, Dobri +2 more
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Thermal Design and Simulation of High Power Press-pack IGBT Module
Kongzhi Yu Xinxi Jishu, 2016 With the improvement of packaging power level of IGBT module, power density and operating temperature on chip will rise, which may lead to an increasing affect of thermal stress on long-term reliability of the device.
XIAO Hongxiu, DOU Zechun, PENG Yongdian
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Application review of IGBT power module cooling system
机车电传动, 2022 As a kind of power semiconductor field-controlled self-shutdown electronic device, IBGT has become an irreplaceable component in new energy vehicle energy conversion, motor driving and high-voltage power switching units.
WANG Weilong +2 more
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Electric Field Analysis of Press-Pack IGBTs
E3S Web of Conferences, 2018 High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At present, wire-bonded technology and press-pack technology are available packaging technologies for high voltage IGBT.
Xinling Tang +4 more
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Application Research of 1 700 V/1 600 A SiC Hybrid IGBT
机车电传动, 2018 SiC module has advantages of high frequency, high efficiency, high temperature resistance and antiradiation. The application situation of SiC module was introduced, and the characteristics of SiC-JBS and SiC hybrid IGBT was expatiated.
YANG Tao, TANG Wei
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EnergiesMonitoring the peak junction hotspot temperature in IGBT modules is critical for ensuring the reliability of high-power industrial multilevel inverters, particularly when operating under extreme thermal conditions, such as in traction applications.
Ahmed H. Okilly +4 more
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Study on influence of solder voids on power cycling lifetime of IGBT module
机车电传动, 2023 Studying the influencing factors of solder lifetime is of great significance to improve the reliability of IGBT modules, but the influence of solder voids as a solder layer defect on the power cycling lifetime of IGBT modules is still unknown ...
LIU Peng +4 more
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Research on Partial Discharge Behavior of AlN Substrate in High Voltage IGBT Module
Kongzhi Yu Xinxi Jishu, 2015 Finite element method was utilized to simulate static electric field distribution in AlN substrate of IGBT module, on which partial discharge experiment was performed. Furthermore, the effect of periodic thermal stress on partial discharge characteristic
FANG Jie +5 more
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