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6.5 kV IGBT-modules

Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370), 2003
Power control in applications with a line voltage of 3 kV DC and more today is managed by GTOs and IGCTs. The IGBT, a device with several advantages compared to power semiconductors in thyristor structure (low requirements regarding the driving unit, easy cooling as a result of the isolated structure) is fully developed and introduced up to a blocking ...
F. Auerbach   +9 more
openaire   +1 more source

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