Results 181 to 190 of about 11,875 (232)

Gate drive considerations for IGBT modules

IEEE Transactions on Industry Applications, 1995
The switching performance of an insulated gate bipolar transistor (IGBT) module depends on the drive circuit characteristics and external DC loop inductance. The authors discuss the influence of these parameters on switching losses, diode recovery, switching voltage transients, short-circuit operation, and d nu /dt induced current.
R. Chokhawala, J. Catt, B. Pelly
openaire   +1 more source

Chip Improvements for Future IGBT Modules

2008 IEEE Industry Applications Society Annual Meeting, 2008
Since the introduction of the IGBT module, improvements in power loss have been achieved by applying new technologies. With the process improvements of the past few years in trench gate technology and light-punch-through vertical structures, it had been thought that the performance of the latest IGBT and pin diode silicon power devices had been brought
John F. Donlon, Eric R. Motto, Tetsuo Takahashi, Hidenori Fujii, Katsumi Satoh   +4 more
openaire   +1 more source

Monitoring of paralleled IGBT/diode modules

IEEE Transactions on Power Electronics, 1999
A method is presented to monitor the state of a converter with an unlimited number of paralleled insulated gate bipolar transistor (IGBT)/diode modules with individual gate drives. The monitoring functions can be implemented without extra signal processing or load-side components. The method is based on the active gate-controlled current balancing (CB)
P. Hofer-Noser, N. Karrer
openaire   +1 more source

Characterization of New Generation IGBT-Modules

EPE Journal, 1994
SummaryThe development of IGBT devices is still moving ahead faster devices with lower losses. This paper will focus on characterization of a third generation IGBT-module and a second generation IGBT-module with improved free-wheeling diodes where especially the power losses are compared in different test conditions.
Blaabjerg, Frede, Pedersen, John Kim, Jæger, Ulrik   +2 more
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Three-phase Advanced Neutral-Point-Clamped IGBT module with Reverse Blocking IGBTs

Proceedings of The 7th International Power Electronics and Motion Control Conference, 2012
Recently, many kinds of power conversion method are used to the applications, three-level inverter system was also widely used in many applications, because of its high-output voltage, or better waveform efficiency as features. On the other hand, conventional Neutral Point-Clamped (NPC) three-level inverter system using clamp diodes has demerit of in ...
Z. Minghui, K. Komatsu
openaire   +1 more source

Advanced SPICE modeling of large power IGBT modules

Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344), 2003
An enhanced insulated gate bipolar transistor (IGBT) model based on the Kraus model with new derivations based on an extra parameter accounting for p-i-n injection was developed to allow simulation of both trench and DMOS IGBT structures. Temperature dependence was also implemented in the model.
R. Azar, F. Udrea, M. DeSilva, G. Amaratunga, W.T. Ng, F. Dawson, W. Findlay, P. Waind   +7 more
openaire   +1 more source

Flexible IGBT modules for high voltage high power modulator applications

IEEE Conference Record - Abstracts. PPPS-2001 Pulsed Power Plasma Science 2001. 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference (Cat. No.01CH37255), 2002
Summary form only given. Modern RF accelerators, plasma implanters, and certain microwave modulators require sustained high average and peak powers to drive an assortment of dynamic loads. North Star has developed a standard solid-state module using a minimum number of IGBTs and parallel pulse transformers to provide as much as 7.5 MW peak power at ...
R.J. Richter-Sand, R.J. Adler
openaire   +1 more source

New process technologies improve IGBT module efficiency

IAS '95. Conference Record of the 1995 IEEE Industry Applications Conference Thirtieth IAS Annual Meeting, 2002
New process technologies are extending the application range of IGBT modules. A 1400 V IGBT with significantly improved efficiency has been developed using an optimized epitaxial (punch-through) process. This new 1400 V device has a square turn-off switching SOA making it suitable for 575/608 VAC inverter applications. A very low saturation voltage 250
E.R. Motto, J.F. Donlon, S. Mori, T. Iida   +3 more
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Characteristics of high voltage IGBT modules

IEE Colloquium on `IGBT Propulsion Drives', 1995
IGBTs with blocking voltage values of 600 V, 1200 V and 1600 V are available for several applications. In traction applications, 600 V and 750 V DC mains are widely distributed. The 1500 V DC mains becomes more and more of interest in Asia, South America and in Europe. Industrial applications have AC mains of 360 V, 500 V, 660 V, etc. While 1600 V IGBT-
openaire   +1 more source

Explosion tests on IGBT high voltage modules

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312), 2003
In this paper, we report on surge current experiments with IGBT modules in low inductance, snubberless circuits. We give design guidelines for robust modules and robust converter designs, discuss scenarios of consequential damage and propose worst case test conditions for explosion safety.
S. Gekenidis, E. Ramezani, H. Zeller
openaire   +1 more source