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Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules [PDF]
MicromachinesWith the rapid advancement of social productivity and technological innovation, the insulated gate bipolar transistor (IGBT) has emerged as a cornerstone in modern power electronic devices [...]
Peisheng Liu, Yaohui Deng
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Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters
Mokslas: Lietuvos Ateitis, 2010 The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated.
Vytautas Bleizgys, Andrius Platakis
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Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)
IEEE Journal of the Electron Devices Society, 2017 A new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region.
Wanjun Chen +10 more
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Acoustic Emission of Monolithic IGBT Transistors [PDF]
New Trends in Production Engineering, 2018 Abstract Due to the increasing number of applications of power semiconductor devices, more and more attention is being paid to diagnostic methods to determine the condition of working semiconductor components. On the basis of the results of experimental research, a correlation can be observed between the transition between the on/off ...
Artur Bejger +2 more
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Controlling electrical circuit of electric motor on igbt transistors
Electrical Engineering and Power Engineering, 2023 Purpose. Development and analysis of the operation of an electrical circuit for controlling a 700 W direct current electric motor using a contactor on IGBT transistors for operation in diesel locomotives. Methodology. Analytical and computational methods for developing and analyzing the operation of an electrical circuit using a contactor on IGBT ...
Shishkin, I., Lushchin, Sergii
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Experimental investigations of monolithic IGBT transistor acoustic emission phenomena [PDF]
ITM Web of Conferences, 2019 Many recent researches are focused on the diagnostic methods allowing determination of the condition of working semiconductor components (power transistors, diodes etc.). As any solid material under stresses (mechanical, temperature and electrical) the semiconductors are generating elastic waves in the case of changing conductivity state.
Kozak Maciej, Gordon Radosław
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IGBT Overcurrent Capabilities in Resonant Circuits [PDF]
SensorsThe control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems.
Basil Mohammed Al-Hadithi +1 more
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Electrothermal Averaged Model of a Diode-Transistor Switch Including IGBT and a Rapid Switching Diode [PDF]
Energies, 2020 This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode.
Paweł Górecki, Krzysztof Górecki
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Detection and Recording of Acoustic Emission in Discrete IGBT Transistors [PDF]
Multidisciplinary Aspects of Production Engineering, 2018 Abstract The article presents the results of experimental research, which is to show a correlation between the change of operating status of single IGBT transistor and its acoustic emission. Sensor signal was obtained with oscilloscope in order to further process it digitally and determine possibility of the damage to the element based ...
Radosław Gordon, Andrzej Dreas
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Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation [PDF]
Transport and Telecommunication Journal, 2015 Abstract The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed.
Krainyukov Alexander, Kutev Valery
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