Results 91 to 100 of about 12,622 (259)
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This paper proposes a modelling method based on multi‐software co‐simulation to precisely model radiated interference in permanent magnet servo drive systems. The accuracy of the simulation model is validated through comparison with actual measurement results. ABSTRACT High‐frequency switching operations of power switching tubes generate high‐frequency
Jingxuan He +7 more
wiley +1 more source
DESIGN OF HIGH-SPEED IGBT DEVICE
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 Results of the investigation of IGBT manufacturing technology parameters influence on its dynamic features are presented. The important role of impurities concentration in various parts of IGBT structure (concentration level in the emitter of the bipolar
I. Yu. Lovshenko +3 more
doaj
Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors [PDF]
, 2015 The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and ...
Didenko, S.I. +6 more
core
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This paper proposes a non‐contact method for measuring the turn‐off time of insulated‐gate bipolar transistor (IGBT) devices in modular multilevel converters (MMC) submodules, using the decay of load‐side common‐mode current. The technique leverages existing current‐sensing infrastructure and avoids intrusive modifications, enabling real‐time ...
Jiyun Liu +7 more
wiley +1 more source
Integrated half-bridge switch using 70-μm-thin devices and hollow interconnects [PDF]
, 2015 An application-oriented integration concept for a half-bridge switch assembly has been developed based on the latest generation 70- μm-thin insulated gate bipolar transistors and diodes, which are rated at 600 V/200 A. This paper addresses the design and
Castellazzi, Alberto +3 more
core +2 more sources
Active Voltage Balancing Control of 9‐Level Multicell‐Based A‐NPC Inverters
IET Power Electronics, Volume 19, Issue 1, January/December 2026.We present a optimization‐free PWM control for single‐phase 9‐level FC A‐NPC inverters that converts measured current and capacitor voltages into logic equations to both balance FC voltages and generate the commanded levels. By removing objective functions/optimizers, it enables fast, simple implementation, with experiments showing robust performance ...
Kasra Amirsoleymani, Vahid Dargahi
wiley +1 more source
A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field
Energies, 2020 A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement ...
Meng Zhang +4 more
doaj +1 more source
Power Converter's IGBT Multi‐State Reliability Analysis for Low Failure Rate Operation
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This paper proposes a multi‐state reliability analysis for IGBTs in power converters, moving beyond the conventional two‐stage model with a constant failure rate and introduces a multi‐state Markov chain model for voltage source converters under different modulation scenarios.
Qiaohan Su +3 more
wiley +1 more source
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented.
S. Ibrahim +2 more
doaj
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This work investigates the displacement amplitude of the contact surfaces between the Si chip and the Mo emitter plate of a PP‐IGBT module during power cycling on the basis of experimental measurements, as well as the effects of loading conditions such as the load current, switching time and normal load on the displacement amplitude.
Tong An +5 more
wiley +1 more source