Results 131 to 140 of about 12,622 (259)

A new trench gate field stop insulated gate bipolar transistor (IGBT) with a significant reduction in Miller capacitance

, 2020
Yan‐juan Liu, Liang Zhao, Lening Wang, Yupeng Wang   +3 more
openalex   +1 more source

Analytical determination of the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors and Punch Through-IGBTs [PDF]

, 2006
Miron J. Cristea
openalex   +1 more source

Study of MOS and IGBT transistors at switching with variable duty cycle [PDF]

C D Cunţan, Ioan Baciu, Mihaela Osaci
openalex   +1 more source

Electrically assisted stereolithography 3D printing of graded permittivity composites for in-situ encapsulation of insulated gate bipolar transistors (IGBTs)

, 2023
Lipeng Zhong, Wei Liu, Youqing Sun, Feng Wang, She Chen, Qiuqin Sun, Yufeng Liu, Chao Yuan, Xiaopeng Li, Guanghai Fei   +9 more
openalex   +2 more sources

Calculation of static and dynamic losses in power IGBT‑transistors by polynomial approximation of basic energy characteristics [PDF]

, 2020
Олександр Плахтій, Volodymyr Nerubatskyi, Denys Hordiienko, Hryhorii Khoruzhevskyi   +3 more
openalex   +1 more source

Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]

Micromachines (Basel)
Yang HC, Chi SC, Huang BH, Lai TC, Yang HY.   +4 more
europepmc   +1 more source

Evaluation of electric vehicle performance using driving cycle clustering based on motor-inverter losses and efficiency. [PDF]

Sci Rep
Abdelali K, Bendjedia B, Rizoug N, Kraiem H, Flah A.   +4 more
europepmc   +1 more source

Advanced power cycling test for power module with on-line on-state VCE measurement [PDF]

, 2015
Blaabjerg, Frede, Choi, Ui-min, Jørgensen, Søren, Svarre, Morten Liengaard, Trintis, Ionut   +4 more
core   +1 more source

Applicability Analysis of High-Voltage Transmission and Substation Equipment Based on Silicon Carbide Devices. [PDF]

Micromachines (Basel)
Zhang H, Nie M, Dong Q, Liu H, Jia P, Li Z, Fang Y.   +6 more
europepmc   +1 more source

Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor. [PDF]

Micromachines (Basel)
Kang KM, Hu JW, Huang CF.
europepmc   +1 more source