Results 11 to 20 of about 12,622 (259)
Numerical Study of a Thyristor Injection Insulated Gate Bipolar Transistor (TI-IGBT) Using P-N-P Collector [PDF]
IEEE Journal of the Electron Devices Society, 2019 A new thyristor injection concept is proposed to decrease conductivity modulation effects in an Insulated Gate Bipolar Transistor (TI-IGBT), which adds a floating p-type layer and an n-type layer at the collector side.
Mengxuan Jiang, Yulei Wang
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A Novel Concept of Electron–Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer [PDF]
Micromachines, 2023 A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large ...
Zhigang Wang, Chong Yang, Xiaobing Huang
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Materials Science Forum, 2005 In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a
Lin Zhu, S. Balachandran, T.P. Chow
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INRUSH CURRENT LIMITATION BY UTILIZATION OF LINEAR MODE OF IGBT TRANSISTOR
HUMAN. ENVIRONMENT. TECHNOLOGIES. Proceedings of the Students International Scientific and Practical Conference, 2016 Input filter is essential part of each switched mode power supply design. Important issue that must be solved in the design process is control of the high inrush current due to rapid rise of the voltage during initial connection of the power to the power supply.
Kroičs, Kaspars, Saltanovs, Rodions
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Three-Dimensional Insulated Gate Bipolar Transistor (IGBT) Development
, 1992 A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices. The 3D-IGBT , unlike other fully integrable power devices, exploits the merits of cellular structure to increase its packing ...
Gilbert, P.V., Neudeck, G.W.
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A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study [PDF]
MicromachinesA novel insulated gate bipolar transistor with Semi-Insulated POly Silicon (SIPOS) is presented in this paper and analyzed through TCAD simulation. In the off state, the SIPOS-IGBT can obtain a uniform electric field distribution, which enables a thinner
Song Yuan +8 more
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Insulated gate bipolar transistor (IGBT) simulation using IG-Spice
, 2014 Master of ...
C.S. Mitter
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Numerical Simulation Analysis on a Composite Edge Terminal Reverse Blocking IGBT
Zhongguo dianli, 2022 Insulated gate bipolar transistor (IGBT) is usually used in combination with power diode in power electric circuit because it has no reverse blocking ability.
Lei CUI +4 more
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AIP AdvancesThe improvement in the reliability and lifespan of insulated gate bipolar transistor (IGBT) devices and the enhancement of system efficiency under high-frequency pulse conditions are receiving increasingly wide attention, and all of these are closely ...
Zenghui Yang +4 more
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Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT
IET Circuits, Devices and Systems, 2021 This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT).
Rui Jin +6 more
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