Results 21 to 30 of about 12,622 (259)
IEEE Journal of the Electron Devices Society, 2020 In this article, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied.
Yipan Zhang, Baoxing Duan, Yintang Yang
doaj +1 more source
Heat Dissipation Characteristics of IGBT Module Based on Flow-Solid Coupling
Micromachines, 2022 With the increase of power level and integration in electric vehicle controllers, the heat flux of the key silicon-based IGBT (Insulated Gate Bipolar Transistor) device has reached its physical limit.
Lipeng Tan +5 more
doaj +1 more source
Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter
Micromachines, 2023 In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics.
Wei Wu +5 more
doaj +1 more source
Failure precursors for insulated gate bipolar transistors (IGBTs) [PDF]
9th International Seminar on Power Semiconductors (ISPS 2008), 2008 Failure precursors indicate changes in a measured variable that can be associated with impending failure. By identifying precursors to failure and by monitoring them, system failures can be predicted and actions can be taken to mitigate their effects. In this study, three potential failure precursor candidates, threshold voltage, transconductance, and ...
N. Patil, D. Das, K. Goebel, M. Pecht
openaire +1 more source
Solidifying Power Electronics [Historical] [PDF]
, 2018 More than one century ago, in 1902, American engineer Peter Cooper Hewitt (1861\u20131921) derived the mercury arc-rectifier, enclosed in a glass bulb, from his mercury-vapor lamp of the previous year.
Guarnieri, Massimo
core +1 more source
Thermo-mechanical stress of bonded wires used in high power modules with alternating and direct current modes [PDF]
, 2012 Today, power electronic reliability is a main subject of interest for many companies and laboratories. The main process leading to the IGBT failure is the cycling thermal stress.
Medjahed, Hassen +2 more
core +4 more sources
Modelling and simulation of sinusoidal pulse width modulation controller for solar photovoltaic inverter to minimize the switching losses and improving the system efficiency [PDF]
Archives of Electrical Engineering, 2022 With the extinction of fossil fuels and high increase in power demand, the necessity for renewable energy power generation has increased globally. Solar PV is one such renewable energy power generation, widely used these days in the power sector.
Sivaraj Panneerselvam +2 more
doaj +1 more source
Energies, 2020 State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under ...
Humphrey Mokom Njawah Achiri +3 more
doaj +1 more source
Stochastic RUL calculation enhanced with TDNN-based IGBT failure modeling [PDF]
, 2016 Power electronics are widely used in the transport and energy sectors. Hence, the reliability of these power electronic components is critical to reducing the maintenance cost of these assets.
Alghassi, Alireza +2 more
core +1 more source
Investigation of FACTS devices to improve power quality in distribution networks [PDF]
, 2011 Flexible AC transmission system (FACTS) technologies are power electronic solutions that improve power transmission through enhanced power transfer volume and stability, and resolve quality and reliability issues in distribution networks carrying ...
Rehman Shaikh, Muhammad Asim +1 more
core +1 more source