Results 31 to 40 of about 12,622 (259)
Research on Residual Life of IGBT Module on EMU in Advanced Repair Based on Power Cycles
Kongzhi Yu Xinxi Jishu, 2023 The insulated gate bipolar transistor (IGBT) module is one of the weakest links in the traction converter system. Accurate life and reliability assessment of the IGBT module is particularly important for safe operation of the traction converter system ...
JIANG Jie, LI Nan
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Shanghai Jiaotong Daxue xuebao, 2023 In order to improve the accuracy of remaining useful life (RUL) prediction of insulated gate bipolar transistor(IGBT) modules across working conditions to enhance their reliability, an RUL prediction method based on the ProbSparse self-attention ...
ZHONG Zhiwei, WANG Yuxiang, HUANG Yixiang, XIAO Dengyu, XIA Pengcheng, LIU Chengliang
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Transient electrothermal simulation of power semiconductor devices [PDF]
, 2010 In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink.
, +6 more
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Current sharing control strategy for IGBTs connected in parallel [PDF]
, 2016 This work focuses on current sharing between punch-through insulated gate bipolar transistors (IGBTs) connected in parallel and evaluates the mechanisms that allow overall current balancing. Two different control strategies are presented.
Pérez Delgado, Raul +2 more
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Less-conventional low-consumption galvanic separated MOSFET-IGBT gate drive supply [PDF]
, 2017 A simple half-bridge, galvanic separated power supply which can be short circuit proof is proposed for gate driver local supplies. The supply is made while hacking a common mode type filter as a transformer, as the transformer shows a good insulation, it
Bikorimana, Jean Marie Vianney +1 more
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Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar
IEEE Journal of the Electron Devices Society, 2016 This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode.
Mengxuan Jiang +4 more
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Thermal Design of Power Electronic Circuits [PDF]
, 2016 The heart of every switched mode converter consists of several switching semiconductor elements. Due to their non-ideal behaviour there are ON state and switching losses heating up the silicon chip.
Künzi, R.
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Aging Prediction of IGBT Based on Improved Support Vector Regression
Zhongguo dianli, 2022 In order to accurately predict the aging state of insulated gate bipolar transistor (IGBT), a novel IGBT aging prediction method is proposed based on improved whale optimization algorithm (IWOA) and optimized support vector regression (SVR).
Zhengxiong CHEN +2 more
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Analysis of junction capacitance characteristics of trench gate IGBT [PDF]
E3S Web of Conferences, 2021 Trench gate field termination IGBT represents the latest structure of insulated gate bipolar transistor (IGBT). Because the internal current of IGBT includes the charging and discharging current of gate capacitance and internal junction capacitance ...
Wang Bo
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Probabilistic Monte-Carlo method for modelling and prediction of electronics component life [PDF]
, 2014 Power electronics are widely used in electric vehicles, railway locomotive and new generation aircrafts. Reliability of these components directly affect the reliability and performance of these vehicular platforms.
Alghassi, Ali +3 more
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