Results 41 to 50 of about 12,622 (259)

Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor

open access: yesEngineering, 2015
Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and
Guoyou Liu, Rongjun Ding, Haihui Luo
doaj   +1 more source

Analysis of the Usefulness Range of the Averaged Electrothermal Model of a Diode–Transistor Switch to Compute the Characteristics of the Boost Converter

open access: yesEnergies, 2020
In the design of modern power electronics converters, especially DC-DC converters, circuit-level computer simulations play an important role. This article analyses the accuracy of computations of the boost converter characteristics in the steady state ...
Paweł Górecki, Krzysztof Górecki
doaj   +1 more source

Bolts connection technique of bamboo in construction work [PDF]

open access: yes, 2017
The construction industry is increasingly developing and growing rapidly with more advanced technologies. The world timber demand is increasing at a rapid rate but the timber supply is however depleting. It has been found through research that bamboo can
Abdullah, Mohd Sufyan   +6 more
core   +1 more source

Design Solutions for Device Structures of Bipolar Transistors with an Insulated Gate and a Vertical Channel Arrangement

open access: yesДоклады Белорусского государственного университета информатики и радиоэлектроники
This work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen   +3 more
doaj   +1 more source

Power Performance Comparison of SiC-IGBT and Si-IGBT Switches in a Three-Phase Inverter for Aircraft Applications

open access: yesMicromachines, 2022
The converters used to integrate the ground power station of planes with the utility grid are generally created with silicon-insulated gate bipolar transistor (Si-IGBT)-based semiconductor technologies. The Si-IGBT switch-based converters are inefficient,
Ibrahim A. S. Abdalgader   +2 more
doaj   +1 more source

Determination of optimal parameters of the pulse width modulation of the 4qs transducer for electriс rolling stock [PDF]

open access: yes, 2018
Досліджено режими роботи однофазного 4qs-перетворювача з широтно-імпульсною модуляцією в складі електрорухомого складу змінного струму. Розроблено методу визначення параметрiв ШIМ, при яких реалізується оптимальний за критерiєм мiнiмiзацiї величини ...
Demydov, O.   +5 more
core   +1 more source

Determining electrical losses of the traction drive of electric train based on a synchronous motor with excitation from permanent magnets [PDF]

open access: yes, 2018
Iдентифiковано параметри iнвертора напруги тягового приводу на базi синхронного двигуна зi збудженням вiд постiйних магнiтiв. Синтезовано iмiтацiйну модель тягового приводу, що дозволяє отримати миттєвi значення електричних втрат в iнверторi та двигунi ...
Demydov, O.   +4 more
core   +1 more source

Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors

open access: yesCase Studies in Thermal Engineering, 2019
In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described.
Mingxing Du   +4 more
doaj   +1 more source

A New Switching Impulse Generator Based on Transformer Boosting and Insulated Gate Bipolar Transistor Trigger Control [PDF]

open access: yes, 2016
To make the switching impulse (SI) generator more compact, portable and feasible in field tests, a new approach based on transformer boosting was developed.
Albarracín Sánchez, Ricardo   +4 more
core   +3 more sources

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