Results 51 to 60 of about 12,622 (259)
Structural Features and Recent Progress of Super Junction IGBT
机车电传动, 2021 With the development of insulated gate bipolar transistor (IGBT) technology, the field stop structure is getting closer to its theoretical limit. Super junction (SJ) is known as "milestone in power MOSFET" and has been introduced in IGBT to further ...
Jinping ZHANG, Xiang XIAO, Bo ZHANG
doaj
A thermal network model considering thermal coupling effect and TIM degradation in IGBT modules
Energy Reports, 2023 Thermal interface materials (TIMs), as important materials for heat dissipation of insulated gate bipolar transistor (IGBT) modules, degrade under long-term thermal cycling, resulting in elevated junction temperatures and threatening the safe operation ...
Xiaotong Zhang +5 more
doaj +1 more source
Design and validation of a platform for electromagnetic fault injection [PDF]
, 2018 Security is acknowledged as one of the main challenges in the design and deployment of embedded circuits. Devices need to operate on-the-field safely and correctly, even when at physical reach of potential adversaries. One of the most powerful techniques
Arumi Delgado, Daniel +2 more
core +1 more source
Multiterminal High‐Voltage Direct Current Projects: A Comprehensive Assessment and Future Prospects
High Voltage, EarlyView.ABSTRACT Multiterminal high‐voltage direct current (MT‐HVDC) systems are an important part of modern power systems, addressing the need for bulk power delivery and efficient renewable energy integration. This paper provides a comprehensive overview of recent advances in MT‐HVDC technology, including launched projects and ongoing initiatives.
Mohammad Hossein Mousavi +3 more
wiley +1 more source
A Simplified Spice Model for IGBT
Active and Passive Electronic Components, 1998 A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific ...
A. Haddi +4 more
doaj +1 more source
IGBT Dynamic Loss Reduction through Device Level Soft Switching
Energies, 2018 Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT) is widely used in high power applications.
Lan Ma +4 more
doaj +1 more source
Exploring SiC Planar IGBTs towards Enhanced Conductivity Modulation Comparable to SiC Trench IGBTs
Crystals, 2020 The state-of-the-art silicon insulated-gate bipolar transistor (IGBT) features a trench gate, since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the critical challenge of a high electric field in the gate oxide, which is a
Meng Zhang, Baikui Li, Jin Wei
doaj +1 more source
High Voltage, EarlyView.ABSTRACT Because of the harsh serving conditions of insulated gate bipolar transistor (IGBT) packaged by silicone gel with high voltage and high frequency, it is crucial to reveal the developing characteristics and inhibiting method of discharged degradation at the interface of silicone gel/ceramic substrates.
Chuang Zhang +7 more
wiley +1 more source
Reducing switching losses through MOSFET-IGBT combination [PDF]
, 2008 This paper introduces a configuration aimed at switching losses reduction trough a power leg constructed by combining a MOSFET and an IGBT. The combined use of these different switches leads to the turn-on losses reduction trough the use of the faster ...
Marinov, Angel +2 more
core
Weibull‐Neural Network Framework for Wind Turbine Lifetime Monitoring and Disturbance Identification
Wind Energy, Volume 29, Issue 4, April 2026.ABSTRACT Wind turbines are vital for sustainable energy, yet their reliability under diverse operational and environmental conditions remains a challenge, often leading to costly failures. This study presents a novel Weibull‐Neural Network Framework to enhance wind turbine lifetime monitoring by estimating reliability (R(t)) and mean residual life (MRL)
Fatemeh Kiadaliry +2 more
wiley +1 more source