Results 61 to 70 of about 12,622 (259)
Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module
Fracture and Structural Integrity, 2020 Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices.
Dianhao Zhang +3 more
doaj +1 more source
Thermal Load Application Method for Temperature Cycle Test of Power Module PP-IGBT
Zhongguo dianli, 2023 Temperature cycling test is an important test method to study the thermal fatigue aging characteristics of power module press pack insulated gate bipolar transistor (PP-IGBT) devices. Therefore, taking the PP-IGBT of flexible direct converter valve power
Biaojun LI +3 more
doaj +1 more source
Thermal Impedance Model of High Power IGBT Modules Considering Heat Coupling Effects [PDF]
, 2014 Thermal loading of Insulated Gate Bipolar Transistor (IGBT) modules is important for the reliability performance of power electronic systems, thus the thermal information of critical points inside module like junction temperature must be accurately ...
Bahman, Amir Sajjad +2 more
core +2 more sources
Engineering Reports, Volume 8, Issue 2, February 2026.Under identical conditions, we benchmark PID against Fuzzy‐Logic control for a single‐phase H‐bridge inverter. FLC achieves faster rise/settling with lower THD and better disturbance rejection than tuned PID while requiring explicit rule design—offering a reproducible baseline and deployment guidance for power‐quality‐constrained inverter applications.
Baraa Taha +4 more
wiley +1 more source
SIMSCAPE Electrical Modelling of the IGBT with Parameter Optimization Using Genetic Algorithm
Journal of Electrical and Computer Engineering, 2021 The concept introduced by MathWorks in the Simscape product is the link representation between the SIMSCAPE library components that correspond to physical connections transmitting power.
Mohamed Baghdadi +3 more
doaj +1 more source
Insulated gate bipolar transistor (IGBT) modeling using IG-SPICE
Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting, 1994 A physics-based model for the insulated gate bipolar transistor (IGBT) is implemented into the widely available circuit simulation package IG-SPICE. Based on analytical equations describing the semiconductor-physics, the model accurately describes the nonlinear junction capacitances, moving boundaries, recombination, and carrier scattering, and ...
Mitter, C. S. +3 more
openaire +1 more source
Switching-Cell Arrays - An Alternative Design Approach in Power Conversion [PDF]
, 2018 © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting /republishing this material for advertising or promotional purposes, creating new ...
Busquets Monge, Sergio +1 more
core +2 more sources
Beyond Conventional Cooling: Advanced Micro/Nanostructures for Managing Extreme Heat Flux
Advanced Materials, Volume 38, Issue 5, 22 January 2026.This review examines the design, application, and manufacturing of biomimetic or engineered micro/nanostructures for managing high heat‐flux in multi‐level electronics by enhancing conductive, convective, phase‐changing, and radiative heat transfer mechanisms, highlighting their potential for efficient, targeted thermal management, and future prospects.
Yuankun Zhang +7 more
wiley +1 more source
An Aging-Degree Evaluation Method for IGBT Bond Wire with Online Multivariate Monitoring
Energies, 2019 The aging fracture of bonding wire is one of the main reasons for failure of insulated gate bipolar transistor (IGBT). This paper proposes an online monitoring method for IGBT bonding wire aging that does not interfere with the normal operation of the ...
Zilang Hu +6 more
doaj +1 more source
A power sharing series power BJT array with isolated low voltage control for AC power control applications [PDF]
, 2006 A technique for a continuously variable AC resistance using a series BJT array is presented. This array provides high power dissipation capability and uniform voltage and power distribution across the individual transistors. The array, controlled using a
Cho, Paul, Kularatna, Nihal
core +2 more sources