Results 81 to 90 of about 12,622 (259)
Mono Amplifier Class D Menggunakan Semikron SKHI 22B dan IGBT Module Semikron SKM75GB128DN [PDF]
, 2013 Dalam perkembangan power amplifier, MOSFET banyak digunakan dalam komposisi pembuatannya. Seperti diketahui, MOSFET memiliki kerugian waktu on-off yang lebih lama dibandingkan dengan IGBT.
Christanto, I. (Ivan)
core
Modeling Inverter Losses for Circuit Simulation [PDF]
, 2004 Transformer-like inverter models can represent a very good alternative to common switch-diode models for simulation, reducing convergence problems and/or calculation time.
Fratta, Antonino, Scapino, Federico
core +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This article presents a Fifteen‐level inverter topology that has a lesser number of switches (12) and can accommodate isolated DC sources. The total harmonic elimination (THD) of the proposed topology using genetic algorithm is within the IEEE 519 standards. Further, the fifteen‐level inverter is implemented in Hardware and firing pulses were generated
Yogesh Joshi +4 more
wiley +1 more source
IGBTs: Concept, Development and New Structures
Kongzhi Yu Xinxi Jishu, 2017 The insulated gate bipolar transistor (IGBT) is arguably the most innovative power device today. It is the only device concept known today that incorporates in a single cell a MOSFET with a bipolar junction transistor, whereby both devices are active in ...
Florin Udrea
doaj
A simplified thermal analysis approach for power transistor rating in PWM-controlled DC/AC converters [PDF]
, 1998 A simplified dynamic thermal analysis approach is proposed for the estimation of the peak junction temperature in power IGBT transistors operating in pulse-width modulation (PWM) controlled DC/AC converters.
Filicori, F., Guarino Lo Bianco, C.
core +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.The multisource adaptive fusion CNN‐transformer method proposed in this study can provide theoretical and technical support for fault diagnosis of high‐voltage MCHBI. It has a promising potential for engineering applications. Abstract In high‐voltage applications, the number of cascaded H‐bridge inverter units is large, the failure probability ...
Weiman Yang +4 more
wiley +1 more source
机车电传动, 2014 Three IGBT short circuit types had been introduced. The short circuit type 2 had been enhanced through optimization of theIGBT transistor gain to withstand higher short circuit current.
LIU Guo-you +5 more
doaj
Efficient Control of IGBT Transistor as Part of Overvoltage Protection
IJEEC - INTERNATIONAL JOURNAL OF ELECTRICAL ENGINEERING AND COMPUTING, 2017 The paper analyzes the phenomena of appearance of overvoltage during the switching-off of the IGBT transistor which arecaused by the presence of parasitic inductance in the switching circuit. This problem can be solved in two ways – by preventing thecause of the overvoltage, or by limiting the overvoltage level.
Nenad Jovančić +2 more
openaire +2 more sources
The Influence of Soldering Profile on the Thermal Parameters of Insulated Gate Bipolar Transistors (IGBTs) [PDF]
, 2021 Adrian Pietruszka +4 more
openalex +1 more source
Methods of high current magnetic field generator for transcranial magnetic stimulation application [PDF]
, 2015 This paper describes the design procedures and underlying concepts of a novel High Current Magnetic Field Generator (HCMFG) with adjustable pulse width for transcranial magnetic stimulation applications.
Bouda, N. +4 more
core +3 more sources