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Sidewall Patterning in 3D Micro/Nanosystems: A Review. [PDF]
Micromachines (Basel)Liu X, Luo C.
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Real-world impact of inverse lithography technology
SPIE Proceedings, 2005In this paper we describe, from the user's point of view, how Inverse Lithography Technology (ILT) differs from Optical Proximity Correction (OPC). We show simulation and experimental results from 90nm and 65nm semiconductor nodes, comparing ILT-generated masks and OPC-generated masks for real-life layouts, in a production environment.
Wolfgang Leitermann, Linyong Pang
exaly +2 more sources
Advanced memory cell design optimization with inverse lithography technology
Design-Process-Technology Co-optimization for Manufacturability XIV, 2020Memory cells and access structures consume a large percentage of area in embedded devices so there is a high return from shrinking the cell area as much as possible. This aggressive scaling leads to very difficult resolution, 2D CD control and process window requirements.
Kyle Braam +2 more
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Inverse lithography technology principles in practice: unintuitive patterns
SPIE Proceedings, 2005In this paper we present unintuitive patterns generated by inverse lithography technology. We show examples of contact hole masks designed with ILT that enjoy larger process windows than OPC. We also show variations in ILT-generated masks as the pitch of the contact hole array changes.
Linyong Pang
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SRAF placement and sizing using inverse lithography technology
SPIE Proceedings, 2007The use of sub-resolution assist features (SRAFs) is a necessary and effective technique to mitigate the proximity effects resulting from low-k1 imaging with aggressive illumination schemes. This paper investigates the application of one implementation of Inverse Lithography Technology (ILT) to determine optimized SRAF placement and size.
Catherine Martinelli +2 more
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Inverse lithography technology (ILT): What is the impact to the photomask industry?
SPIE Proceedings, 2006Inverse Lithography Technology (ILT) is a rigorous approach to determine the mask shapes that produce the desired on-wafer results. In this paper, we briefly describe an image (or pixel))-based implementation of ILT in comparison to OPC technologies, which are usually edge-based.
Linyong Pang
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Proceedings of SPIE, 2008
In this paper, an overview of Inverse Lithography Technology (ILT) based on Level Set Methods (LSM) is provided. Applications of ILT in the advanced lithography process are then shown for several different devices, including DRAM, SRAM, FLASH, random logic, and imaging devices.
Thuc Dam, Peter Hu, Dongxue Chen
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In this paper, an overview of Inverse Lithography Technology (ILT) based on Level Set Methods (LSM) is provided. Applications of ILT in the advanced lithography process are then shown for several different devices, including DRAM, SRAM, FLASH, random logic, and imaging devices.
Thuc Dam, Peter Hu, Dongxue Chen
exaly +2 more sources