Selective isotropic etching of SiO2 over Si3N4 using NF3/H2 remote plasma and methanol vapor [PDF]
Scientific Reports, 2023 In this study, an isotropic etching process of SiO2 selective to Si3N4 using NF3/H2/methanol chemistry was investigated. HF was formed using a NF3/H2 remote plasma, and in order to remove the F radicals, which induces spontaneous etching of Si-base ...
Hong Seong Gil +7 more
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IEEE Journal of the Electron Devices Society, 2021 We investigated the formation mechanism of a rounded silicon-germanium (SiGe)-etch front (rounding) in gate-all-around field-effect transistor (GAA-FET) manufacturing.
Makoto Satake, Taku Iwase
exaly +3 more sources
Advances in Morphology Control of Through-Glass via Wet Etching for High-Performance Glass-Based Packaging [PDF]
MicromachinesThrough-glass vias (TGVs) are important high-aspect-ratio structures for glass-based advanced integration, and their wet-etching morphology significantly influences metallization quality, electrical performance, and reliability. This review establishes a
Qi Zhang, Houtong Liu
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Resonant MEMS Pressure Sensor in 180 nm CMOS Technology Obtained by BEOL Isotropic Etching [PDF]
Sensors, 2020 This work presents the design and characterization of a resonant CMOS-MEMS pressure sensor manufactured in a standard 180 nm CMOS industry-compatible technology.
Diana Mata-Hernandez +3 more
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Highly Selective Isotropic Etching of Si to SiGe Using CF4/O2/N2 Plasma for Advanced GAA Nanosheet Transistor [PDF]
NanomaterialsThe paradigm shift from FinFET to gate-all-around nanosheet (GAA-NS) transistor architectures necessitates fundamental innovations in channel material engineering.
Jiayang Li +3 more
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Isotropic Tuning of Electrochemical Etching for the Nanometric Finishing of Metals
Nanomanufacturing and Metrology, 2022 AbstractIsotropic etching polishing (IEP) based on the merging of isotropic etch pits has been proposed as a generic metal finishing approach. In this work, the tuning of the etching isotropy of various metals, which is the key to realizing the finishing effect of IEP, is studied by theoretical analysis and etching experiments. The isotropic etching of
Hui Deng
exaly +2 more sources
Advanced BCl3-Driven Deep Ion Etching of β-Ga2O3 for Precision High-Aspect-Ratio Nanostructures [PDF]
SensorsGallium oxide-based devices are critical in various applications, including industrial safety, the gas and petroleum sectors, and research environments. However, the deep etching process has not been thoroughly explored.
Badriyah Alhalaili
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Batch Fabrication of Wear-Resistant and Conductive Probe with PtSi Tip
Micromachines, 2021 This paper presents a simple and reliable routine for batch fabrication of wear-resistant and conductive probe with a PtSi tip. The fabrication process is based on inductively coupled plasma (ICP) etching, metal evaporation, and annealing.
Meijie Liu +5 more
doaj +1 more source
Effects of Mask Material on Lateral Undercut of Silicon Dry Etching
Micromachines, 2023 The silicon etching process is a core component of production in the semiconductor industry. Undercut is a nonideal effect in silicon dry etching. A reduced undercut is desired when preparing structures that demand a good sidewall morphology, while an ...
Yongkang Zhang +8 more
doaj +1 more source
Three-dimensional simulations of the surface topography evolution of niobium superconducting radio frequency cavities [PDF]
Nuclear Technology and Radiation Protection, 2014 This paper contains results of the three-dimensional simulations of the surface topography evolution of the niobium superconducting radio frequency cavities during isotropic and anisotropic etching modes.
Rađenović Branislav M. +2 more
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