Results 11 to 20 of about 243,893 (286)

Dry etching and sputtering [PDF]

open access: yes, 2003
Dry etching is an important process for micro- and nanofabrication. Sputtering effects can arise in two contexts within a dry-etch process. Incoming ions cause removal of volatile products that arise from the interaction between the dry-etch plasma and ...
Wilkinson, C.D.W.   +3 more
core   +2 more sources

ELABORATION OF THE PLATFORM FOR FLEXOELECTRIC INVESTIGATION OF GaN MICROTUBES [PDF]

open access: yesJournal of Engineering Science (Chişinău), 2020
In this paper, the design and elaboration of a cost-effective technological process for the fabrication of the platform for the study of flexoelectric properties of GaN microtubes with the diameter of 2 - 5 μm and the thickness of the microtube walls of ...
MONAICO, Elena   +3 more
doaj   +1 more source

Batch Fabrication of Silicon Nanometer Tip Using Isotropic Inductively Coupled Plasma Etching

open access: yesMicromachines, 2020
This work reports a batch fabrication process for silicon nanometer tip based on isotropic inductively coupled plasma (ICP) etching technology. The silicon tips with nanometer apex and small surface roughness are produced at wafer-level with good etching
Lihao Wang   +6 more
doaj   +1 more source

Overhang Saddle Fin Sidewall Structure for Highly Reliable DRAM Operation

open access: yesIEEE Access, 2023
A novel memory cell transistor structure based on a saddle fin-based DRAM is presented for highly reliable operations. The overhang saddle fin (oss-fin) active structure is formed by two steps of etching of the fin; isotropic etching for the short side ...
Jin-Woo Han   +3 more
doaj   +1 more source

ICP Etching of Silicon for Micro and Nanoscale Devices [PDF]

open access: yes, 2010
The physical structuring of silicon is one of the cornerstones of modern microelectronics and integrated circuits. Typical structuring of silicon requires generating a plasma to chemically or physically etch silicon.
Henry, Michael David
core   +1 more source

Giant Direct Magnetoelectric Effect in Nanocomposite CoFe<sub>2</sub>O<sub>4</sub>:PVDF-TrFE Thin Films. [PDF]

open access: yesAdv Sci (Weinh)
A novel three‐step grow‐etch‐fill fabrication approach creates structured cobalt ferrite/ferroelectric polymer nanocomposites with high interfacial areas. Driven by efficient strain‐mediated coupling, this crystalline system achieves a giant room‐temperature magnetoelectric coefficient nearly two orders of magnitude higher than other CFO/PVDF‐TrFE thin
de H-Óra M   +8 more
europepmc   +2 more sources

naitsok/ultimate-psi-etching: Ultimate PSi Etching 2.0.2.5

open access: yes, 2022
A NI LabVIEW-based software for electrochemical anodization of Si wafers. Features: Preistalled etching cells. Three different etching regimes: constant current, pulsed etching, and non-linear current. Preinstalled wafer liftoff pulses.
Konstantin Tamarov
core   +1 more source

On large bending deformations of transversely isotropic rectangular elastic blocks [PDF]

open access: yes, 2007
In this paper we examine the classical problem of finite bending of a rectangular block of elastic material into a sector of a circular cylindrical tube in respect of compressible transversely isotropic elastic materials.
Kassianidis , Fotios   +3 more
core   +1 more source

RESEARCH PROCESS PLASMA ETCHING SIO2 MEMBRANE

open access: yesВестник Дагестанского государственного технического университета: Технические науки, 2016
The article discusses the results of plasma chemical etching of silicon dioxide in the fluorine-containing medium in the manufacture of semiconductor devices.
T. A. Ismailov   +3 more
doaj   +1 more source

Preparation of small silicon carbide quantum dots by wet chemical etching [PDF]

open access: yes, 2013
Fabrication of nanosized silicon carbide (SiC) crystals is a crucial step in many biomedical applications. Here we report an effective fabrication method of SiC nanocrystals based on simple electroless wet chemical etching of crystalline cubic SiC ...
Szekrényes, Zsolt   +5 more
core   +1 more source

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