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Titanium isotropic and anisotropic etching for MEMS applications
2021 Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS (DTIP), 2021Titanium (Ti) exhibits several advantages for the fabrication of biomedical microelectromechanical systems (bio-MEMS), due to its remarkable properties such as good corrosion resistance and biocompatibility. Recent advances in titanium micromachining have made it possible to create such microsystems.
Rim Ettouri +6 more
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Materials Science Forum, 2008
Isotropic etching of silicon carbide was achieved using a capacitive coupled parallel plate reactor in plasma etching mode and SF6 at elevated substrate temperatures. It was observed to be remarkable at substrate temperatures above 350°C. The influence of chamber pressure, masking materials, rf-power and substrate temperature were analyzed.
Thomas Stauden +6 more
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Isotropic etching of silicon carbide was achieved using a capacitive coupled parallel plate reactor in plasma etching mode and SF6 at elevated substrate temperatures. It was observed to be remarkable at substrate temperatures above 350°C. The influence of chamber pressure, masking materials, rf-power and substrate temperature were analyzed.
Thomas Stauden +6 more
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Binary-optic smoothing with isotropic etching
Applied Optics, 1997Binary optics are an important part of modern optics, but they have some inherent problems because of their binary nature. The optics cannot achieve maximum efficiency unless the rms surface error can be reduced. A technique for smoothing jagged surfaces by use of isotropic etching is presented.
J D, Mansell, D R, Neal, S W, Smith
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Superamphiphobic Surface by Nanotransfer Molding and Isotropic Etching
Langmuir, 2013We present a novel method of fabricating superhydrophobic and superoleophobic surfaces with nanoscale reentrant curvature by nanotransfer molding and controlled wet etching of the facile undercut. This method produces completely ordered re-entrant nanostructures and prevents capillary-induced bundling effects. The mushroom-like, re-entrant, overhanging
Sang Eon, Lee +3 more
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Study of Self-Limiting Etching Behavior in Wet Isotropic Etching of Silicon
Japanese Journal of Applied Physics, 1998This paper reports a self-limiting etching behavior of an isotropic silicon etchant (consisted of hydrofluoric, nitric and acetic acids) during the formation of a spherical cavity in a silicon wafer. We observe that the etch rate drops drastically when the etch-front diameter is approximately equal to 1.8 times the etch window size ...
C.-H. Han, E.S. Kim
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Profile control in isotropic plasma etching
IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop - ASMC '92 Proceedings, 2003The possibility of controlling the lateral-to-vertical etch ratio of undoped dielectric material is tested. The Lam Research Rainbow 4500i, configured with a downstream isotropic plasma etch chamber, was used for the study. The tetra-ethyl-ortho-silicate (TEOS) isotropic etch profile was examined as a function of process parameters in order to ...
H. Zhu, R. Lindquist
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Isotropic Plasma Etching of SiO2 Films
Russian Microelectronics, 2002The isotropic etching of SiO2 with an SF6–O2 plasma is studied experimentally. It is shown that the key factors in the process are the total and partial pressures of SF6 and O2 and the RF power. A smoothed-down edge profile of contact windows is obtained if SF6 and O2 are mixed in a ratio of 1 : 10 to 1 : 5.
A. A. Kovalevskii +3 more
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(Invited) The Use of Plasmas for Isotropic Atomic Layer Etching
ECS Meeting Abstracts, 2023Atomic layer etching (ALE) is set to be a vital part of the advanced semiconductor manufacturing toolbox, known for its precise control of the film thickness and minimal damage. These benefits are possible due to the sequential self-limiting half-cycles that are employed within an ALE process. Initially, ALE was underestimated due to low etch rates,
Nicholas John Chittock +3 more
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Etched-track kinetics in isotropic detectors
Nuclear Track Detection, 1977Abstract As the etching of a charged-particle track proceeds in a detector, three successive phases can be recognized: the “cone phase”, the “transirion phase”, and the “sphere phase”. Equations are derived to give the values of various useful etch-pit parameters, in particular those connected with the surface openings in the three phases.
A. Ali, S.A. Durrani
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Highly selective isotropic etching processes
Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference, 2004We show how it was possible to develop an etching process of SiGe with a high selectivity to similar materials such as nitride, oxide and even pure silicon. The study of the material and process parameters has lead to an understanding of the etching mechanisms and permitted to control the selectivity so as to improve or invert it, which gave rise to ...
S. Borel, C. Arvet, J. Bilde, D. Louis
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