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Isotropic etching of silicon in fluorine gas for MEMS micromachining
Journal of Micromechanics and Microengineering, 2007Etching of silicon with molecular fluorine for the micromachining of micro electro mechanical systems (MEMS) has been evaluated. The etching process is carried out in a continuous flow etching system that uses a 25 vol% mixture of F2 in N2 and operates at room temperature and atmospheric pressure.
Leonel R Arana +5 more
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Highly selective isotropic dry etch based nanofabrication
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2007Metallic nanowires have significant importance in microelectronic circuits [N. A. Melosh et al., Science 300, 112 (2003)], memory cells, optics [X. Wu et al., Nature (London) 430, 61 (2004)], liquid crystal displays [C. Lapointe et al., Science 303, 652 (2004)], and sensors [R. C. Walter et al., Surf. Interface Anal. 34, 409 (2002)].
Muhammad Mustafa Hussain +4 more
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Isotropic etch for SiO2 microcantilever release with ICP system
Microelectronic Engineering, 2008Inductively coupled plasma (ICP) system has been widely used for anisotropic silicon etching because it offers high aspect ratio with a vertical side wall. The isotropic etching capability of the ICP system, however, has not gained much attention, even though it possesses advantages in profile control and high etching rate over wet isotropic etching or
Qi Chen +3 more
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A valve-less planar pump isotropically etched in silicon
Journal of Micromechanics and Microengineering, 1996The first valve-less diffuser fluid pump in silicon is presented. It consists of a planar double-chamber arrangement fabricated in a silicon wafer anodically bonded to a glass wafer. The pump uses fluid-directing diffuser - nozzle elements which have a depth of and a neck width of . The pump chamber diameter is 6 mm.
Anders Olsson +3 more
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Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308), 2002
In this paper, a novel post-CMOS micromachining technique using inductively coupled plasma (ICP) etching is described and the processing space is explored and characterized. Unlike most ICP processes using photoresist as a mask, we demonstrated that aluminum can be used in this type of system.
null Xu Zhu, D.W. Greve, G.K. Fedder
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In this paper, a novel post-CMOS micromachining technique using inductively coupled plasma (ICP) etching is described and the processing space is explored and characterized. Unlike most ICP processes using photoresist as a mask, we demonstrated that aluminum can be used in this type of system.
null Xu Zhu, D.W. Greve, G.K. Fedder
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Mechanisms of isotropic and selective etching between SiGe and Si
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006The impact of SiGe isotropic etching selectively to Si on structures such as silicon on nothing or gate all around has been evaluated through the electrical performances of devices that were subjected to different etching processes. New prospects and evolutions in microelectronics can be foreseen, thanks to the development of the opposite process, i.e.,
V. Caubet +3 more
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Nanotechnology, 2009
Plasma etching of densely packed arrays of polystyrene particles leads to arrays of spherical nanostructures with adjustable diameters while keeping the periodicity fixed. A linear dependence between diameter of the particles and etching time was observed for particles down to sizes of sub-50 nm.
Brombacher, Christoph +9 more
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Plasma etching of densely packed arrays of polystyrene particles leads to arrays of spherical nanostructures with adjustable diameters while keeping the periodicity fixed. A linear dependence between diameter of the particles and etching time was observed for particles down to sizes of sub-50 nm.
Brombacher, Christoph +9 more
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Lab on a Chip, 2009
To enable several on-chip cell handling operations in a fused-silica substrate, small shallow micropores are radially embedded in larger deeper microchannels using an adaptation of single-level isotropic wet etching. By varying the distance between features on the photolithographic mask (mask distance), we can precisely control the overlap between two ...
Thomas D, Perroud +6 more
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To enable several on-chip cell handling operations in a fused-silica substrate, small shallow micropores are radially embedded in larger deeper microchannels using an adaptation of single-level isotropic wet etching. By varying the distance between features on the photolithographic mask (mask distance), we can precisely control the overlap between two ...
Thomas D, Perroud +6 more
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Numerical study on performance of pyramidal and conical isotropic etched single emitters
Microelectronics Journal, 2006Abstract A full three-dimensional model was implemented in order to investigate the electrical characteristics of conical and pyramidal isotropic etched emitters. The analysis was performed using the finite element method (FEM). The simulations of both emitters were modeled using a combination of tetrahedral and hexahedral elements that are capable ...
Juliano Fujioka Mologni +2 more
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Isotropic Wet Etching of Acoustically-Spalled GaAs
2023 IEEE 50th Photovoltaic Specialists Conference (PVSC), 2023Anica N Neumann +4 more
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