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Experimental investigation of anisotropy in isotropic silicon etching
Journal of Micromechanics and Microengineering, 2007Isotropic etching of silicon in HF-based solutions exhibits some level of anisotropy. We study this anisotropy in detail by etching silicon via circular mask openings for wafers of different orientations. The in-plane shape of the cavities is analyzed with high precision as a function of the etching time and opening size.
Svetovoy, Vitaly +2 more
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Composition tailored isotropic and anisotropic wet etching of glass
Materials Today: Proceedings, 2021Abstract The major composition of any glass substrates consists of more than 70% silicon dioxide with varying concentration of alkali and alkaline earth metals with minor additives such as Al2O3, B2O3 etc. In this study, glass substrates of different compositions were etched successfully using HF based wet etchants.
Aibhattra M. Manasa +2 more
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Silicon isotropic and anisotropic etching for MEMS applications
Microsystem Technologies, 2012In MEMS technology there is an increasing interest in developing high aspect ratio silicon columns having rounded corners, slightly positive tapered shafts, sharp tips, and smooth surfaces. A precise control of the profile can be used for different applications, such as for molds used in polymer hot embossing processes, micro needles used for drug ...
S. Negi, R. Bhandari
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Investigation and simulation of XeF2 isotropic etching of silicon
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2002Trenching and loading phenomena observed on XeF2-etched (100) silicon wafers are explained in this article. Trenching refers to deeper etching at the side of an etch feature with respect to the middle of the feature. Loading is the reduction in etch depth that adjacent etched regions impose on their respective etch profiles.
Behraad Bahreyni, C. Shafai
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The effects of isotropic etching on roughening and smoothing of nanostructure
Electronic Materials Letters, 2012The main goal of this letter is to show how the same process such as isotropic etching leads to roughening of the nanocomposite materials while for the roughed nanostructure made of homogeneous materials can lead to smoothing. The three dimensional simulations based on the level set method have been carried out in order to study the influence of the ...
Branislav Radjenović +1 more
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Optimization of an isotropic etching process on silicon wafers
2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT), 2010Etching process involves various chemical reactions and reflects significantly on silicon wafer quality. Etching parameters are evaluated in order to optimize the isotropic etching process. For optimization purpose, Design of Experiment (DOE) with full factorial design is employed.
Rozzeta Dolah, Hamidon Musa
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Ion track etching in isotropic polymers: etched track shape and detection efficiency
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996Abstract This paper describes the properties of isotropic polymeric nuclear track detector (polycarbonate) used in the field of particle detection. We will begin the paper by presenting an etching model whose etching kinetics we will assume to be controlled by two distinct velocities, namely VT (the etching rate along the latent track) and VB the ...
Michel Fromm +2 more
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Temperature Facilitated ECR-Etching for Isotropic SiC Structuring
Materials Science Forum, 2010In order to realize complex three dimensional or free standing structures on SiC substrates, an undercut, i.e. a selective isotropic etching process of SiC, is required. This was realized using an electron cyclotron resonance etching set up with pure SF6 and a SF6/Ar gas composition at elevated substrate temperatures.
Florentina Niebelschütz +3 more
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Thermal Isotropic Atomic Layer Etching of Metallic Molybdenum
ECS Meeting Abstracts, 2020In high aspect ratio structures such as 3D NAND stacks, high-k oxides or certain metals need to be removed from sidewalls and even non-line-of-site locations where access via reactive ion etching would be challenging or impossible. To achieve etching in these locations, thermal processes need to be applied that lack any intrinsic directionality and ...
Andreas Fischer +2 more
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Isotropic etching of polycrystalline silicon wafer by acidic solution
International Conference on Advanced Nanomaterials & Emerging Engineering Technologies, 2013In photovoltaic technology, texturing of base wafer has great importance since it reduces the reflectance of incident light that leads to improvement in the conversion efficiency. Due to different orientations present in polycrystalline silicon wafer an isotropic etching and the texturing without grain boundary delineation is great challenge.
Mohit Agarwal, Uday Singh, R.O. Dusane
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