Results 11 to 20 of about 616,094 (331)
The insulated gate bipolar transistor (IGBT), one of the most vulnerable component, is one of the most precious central component in the converter interior.
Lingfeng Shao, Yi Hu, Guoqing Xu
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This article presents the results of computer analysis of selected switching networks. In these analyses, the influence of selected parasitic components of electronic switches on the total and active power losses in these switches is considered. Analyses
Krzysztof Górecki
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Insulated gate bipolar transistor (IGBT) is widely used in power equipment, it generally works in complex circuit profiles and it is very difficult to measure or predict the thermal parameters of the module in real-time and evaluate the corresponding ...
Xiangxiang Liu +4 more
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State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under ...
Humphrey Mokom Njawah Achiri +3 more
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Online Short-Circuit Protection Strategy of an Electric Powerpack for Electric Oil Pump Applications
With the trend towards the miniaturisation and electrification of automotive components, the electric oil pump (EOP) is generally designed as an integrated powerpack in which a motor and an electronic control unit (ECU) are combined into an integrated ...
Youngwoo Noh, Wonkyu Kim, Ju Lee
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Shot Noise of a Temperature-Biased Tunnel Junction [PDF]
5 pages, 4 ...
Samuel Larocque +3 more
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As an important part of photovoltaic (PV) system, the reliability of PV inverter is the key to ensure the safe and reliable operation of PV power generation system.
Bo Zhang +4 more
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The temperature-sensitive electrical parameter (TSEP) method is widely used in the extraction and prediction of junction temperature (Tj) of power semiconductor devices.
Lingfeng Shao +6 more
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Dissipation in a finite-temperature atomic Josephson junction
We numerically demonstrate and characterize the emergence of distinct dynamical regimes of a finite temperature bosonic superfluid in an elongated Josephson junction generated by a thin Gaussian barrier over the entire temperature range where a well-formed condensate can be clearly identified.
K. Xhani, N. P. Proukakis
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Ex-situ Tunnel Junction Process Technique Characterized by Coulomb Blockade Thermometry [PDF]
We investigate a wafer scale tunnel junction fabrication method, where a plasma etched via through a dielectric layer covering bottom Al electrode defines the tunnel junction area. The ex-situ tunnel barrier is formed by oxidation of the bottom electrode
Enouz-Vedrenne, S. +5 more
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