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Scanning Probe Microscopy: Ultrasonic Force and Scanning Kelvin Probe Force Microscopy
2004In 1981, Gerd Binning and Heinrich Rohree at IBM Zurich developed the first generation of the scanning probe microscope, the scanning tunneling microscope for which they received the Noble Prize in physics. The Scanning Tunneling Microscope (STM) was a fantastic breakthrough with its capability to image atoms with angstrom precision.
C. Druffner +4 more
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Quantitative Analysis of Kelvin Probe Force Microscopy on Semiconductors
2018As is well known, Kelvin Probe Force Microscopy (KPFM) is a powerful and versatile tool to measure the contact potential difference (CPD) in metals. Here, we discuss the application of KPFM for the investigation of semiconducting materials, where the interpretation of KPFM is complicated by band bending and surface charge.
Polak, Leo, Wijngaarden, Rinke J.
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Resolution and contrast in Kelvin probe force microscopy
Journal of Applied Physics, 1998The combination of atomic force microscopy and Kelvin probe technology is a powerful tool to obtain high-resolution maps of the surface potential distribution on conducting and nonconducting samples. However, resolution and contrast transfer of this method have not been fully understood, so far.
H. O. Jacobs +3 more
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Practical aspects of Kelvin probe force microscopy
Review of Scientific Instruments, 1999We discuss practical aspects of Kelvin probe force microscopy (KFM) which are important to obtain stable images of the electric surface potential distribution at high spatial resolution (<100 nm) and high potential sensitivity (<1 mV) on conducting and nonconducting samples.
H. O. Jacobs, H. F. Knapp, A. Stemmer
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Kelvin Probe Force Microscopy with Atomic Resolution
2018The surface potential distribution measured using Kelvin probe force microscopy (KPFM) is influenced by the contact potential difference (CPD) between the tip and surface, the stray capacitance of the cantilever, and fixed monopole charges on the surface and tip. The interpretation of atomic-scale KPFM contrast studies has been controversial.
Yan Jun Li +5 more
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Kelvin probe force microscopy of beveled semiconductors
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2002For the first time, we present the results of Kelvin probe force microscope studies on beveled samples. The ease of sample preparation and simplicity of the measurement make this technique a good candidate for the rapid characterization of semiconductor multilayers.
R. S. Ferguson, K. Fobelets, L. F. Cohen
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Kelvin Probe Force Microscopy in Nanoscience and Nanotechnology
2015Kelvin probe force microscopy (KPFM) is applicable to measure surface potential and work function in a localized nanoscale surface area. In this chapter, we describe the theory and measurement of KPFM and its applications in the characterization of inorganic nanostructure and nanomaterials.
Da Luo, Hao Sun, Yan Li
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KELVIN PROBE FORCE MICROSCOPY OF MOLECULAR SURFACES
Annual Review of Materials Science, 1999▪ Abstract  The electrostatic force microscope is one of many specialized tip sensors used in near-field microscopy. This type of microscope is realized by applying a voltage on a conducting AFM tip. It can be used to image samples that present a distribution of electrical properties on inhomogeneous materials as well as on nanostructures.
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A Tutorial on Instrumental Parameters in Pulsed Force Kelvin Probe Force Microscopy
LangmuirFor the creation of smaller and smaller electrical devices and fundamental studies, Kelvin Probe Force Microscopy (KPFM) offers a technique that measures the surface potential with nanometer lateral resolution and allows for a more precise understanding of properties such as the work function, the localization of charges and the doping of materials ...
Guillermo Lozano-Onrubia +2 more
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