Results 101 to 110 of about 3,543 (201)
Table 2. Pinning Pin Description Simplified outline Graphic symbol [PDF]
A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF ...
General Description
core
Substrate Current Enhances HCI Lifetime in STI-Based LDMOS
There is an increasing demand for LDMOS with low RON, high IDSAT, and longer HCI lifetime offered by standard CMOS technology. We achieved these demands without introducing additional processes or altering the LDMOS design. Increasing the dose and energy
Yoo Seon Song +10 more
doaj +1 more source
A Temperature Analysis of High-power AlGaN/GaN HEMTs [PDF]
Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies.
Borghs, G. +8 more
core +2 more sources
Pengontrolan High Power Amplifier dan Driver Standar Dvb-t2 untuk Pemancar TV Komunitas [PDF]
Sistem penyiaran TV di Indonesia masih menggu[nakan modulasi analog. Hal ini mengakibatkan penggunaan bandwidth frekuensi UHF tidak efisien. TV digital dikembangkan sebagai solusi permasalahan tersebut.Bandwidth UHF pada TV digital mampu menduduki 9 ...
Aulia, S. (Suci) +2 more
core
Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B$^+$) and phosphorous (P$^+$) ions. Different samples, prepared by varying the ion dose in the range $10^{14}$ to 5 x $10^{15}$ and ion energy in the range 150-350 keV, were ...
A. K. Shukla +44 more
core +1 more source
Temperature-Characteristic Survey of a 1000-W LDMOS Power Amplifier
To investigate the temperature characteristics of a laterally double-diffused metal oxide semiconductor (LDMOS) 1000 W shortwave solid-state power amplifier (PA), a comprehensive series of tests has been conducted.
Qian Lin +5 more
doaj +1 more source
Third-order Intermodulation Reduction in Mobile Power Amplifiers by the First Stage Bias Control [PDF]
In this paper, the third order intermodulation distortion (IMD3) of three-stage power amplifier (PA) is analyzed using the Volterra series. The analysis explains how the total IMD3 of the three-stage power amplifier can be reduced by the first-stage bias
Jung, J. H., Kwak, C. H., Lee, J. S.
core +1 more source
This paper reviews the main types of r.f. power amplifiers which are, or may be, used for particle accelerators. It covers solid-state devices, tetrodes, inductive output tubes, klystrons, magnetrons, and gyrotrons with power outputs greater than 10 kW c.
Carter, R. G.
core +1 more source
An RF-Ultrasound Relay for Adaptive Wireless Powering Across Tissue Interfaces. [PDF]
So E +3 more
europepmc +1 more source
Functional Interrupts and Destructive Failures from Single Event Effect Testing of Point-Of-Load Devices [PDF]
We show examples of single event functional interrupt and destructive failure in modern POL devices. The increasing complexity and diversity of the design and process introduce hard SEE modes that are triggered by various ...
Chen, Dakai +5 more
core +1 more source

