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SLOP-LDMOS - A novel super-junction concept LDMOS and its experimental demonstration
Proceedings. 2005 International Conference on Communications, Circuits and Systems, 2005., 2005In this paper, a novel surface low on-resistance path lateral double-diffusion MOSFET (SLOP-LDMOS), based on the super junction (SJ) concept, is presented and experimentally demonstrated for the first time. The key feature of this new structure is that the super junction primarily provides the low on-resistance path and it is just located at the ...
null Bo Zhang +3 more
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Physica Scripta, 2002
A new vertical channel LDMOS, which decreases the on-resistance without sacrificing the breakdown voltage, is proposed and verified by numerical simulation. In the proposed vertical channel LDMOS, the channel and the drift region are located in the trench between the source and the drain. The total cell pitch of the proposed device is decreased to 4 μm
Seung-Chul Lee +3 more
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A new vertical channel LDMOS, which decreases the on-resistance without sacrificing the breakdown voltage, is proposed and verified by numerical simulation. In the proposed vertical channel LDMOS, the channel and the drift region are located in the trench between the source and the drain. The total cell pitch of the proposed device is decreased to 4 μm
Seung-Chul Lee +3 more
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120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit
IEEE Transactions on Electron Devices, 2000A new device structure named IDLDMOS is proposed to overcome the power LDMOS limit (R/sub on, sp/ /spl prop/ BV/sub dss//sup 2.5/). The concept is based on replacing LDMOS lightly doped n-drift region by moderately doped alternating p and n layers of suitable dimension and doping.
Xu, S. +4 more
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LDMOS: НОВЫЕ РАЗРАБОТКИ АО «НИИЭТ»
ELECTRONICS: SCIENCE, TECHNOLOGY, BUSINESS, 2023Приводятся сведения об усовершенствованиях технологии LDMOS в АО «НИИЭТ», а также о разрабатываемых предприятием СВЧ-транзисторах, основанных на данной технологии и предназначенных для применения в телевизионной аппаратуре стандартов DVB-T / DVB-T2.
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Rugged Dotted-channel LDMOS structure
2008 IEEE International Electron Devices Meeting, 2008This paper presents the extremely robust and innovative dotted-channel structure which utilizes a unique approach of suppressing the parasitic bipolar to significantly improve the SOA and push the boundaries of LDMOS operation to a new realm. The structure has body contact placed through the poly-silicon gate of the standard MOSFET resulting in a hole (
Tahir Khan +3 more
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Improvement of LDMOS MMICs compactness
2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR), 2016This paper describes an innovative mean of realizing input matching networks for LDMOS MMICs, by using a very compact broadband transformer balun, which is integrated in the input matching network, in the active device gate plane instead of the 50 ohms port.
Sullivan Plet +2 more
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IEEE Circuits and Devices Magazine, 2006
The super junction (SJ) concept (Coe et al.) applied to power semiconductor devices is attractive due to its potential for reducing on-resistance at a given breakdown voltage. Discrete SJ vertical power devices have recently become available commercially.
Il-yong Park, C. T. Salama
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The super junction (SJ) concept (Coe et al.) applied to power semiconductor devices is attractive due to its potential for reducing on-resistance at a given breakdown voltage. Discrete SJ vertical power devices have recently become available commercially.
Il-yong Park, C. T. Salama
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A hybrid VIGBT-LDMOS transistor
IEEE Transactions on Electron Devices, 1988A hybrid VIGBT-LDMOS transistor which consists of a VIGBT (vertical insulated-gate bipolar transistor) path with a lateral DMOSFET path, implemented in a 300-V, p-channel version, has been demonstrated. The device can be operated with series resistors attached to either the collector or the drain terminals.
T.P. Chow, B.J. Baliga
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Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices
Microelectronics Reliability, 2016Abstract This paper presents a comparative study on the electrostatic discharge (ESD) characteristics of Lateral Diffused Metal-Oxide-Semiconductor (LDMOS) and LDMOS with embedded silicon controlled rectifier (LDMOS-SCR) by using transmission line pulsing (TLP) measurements. Results show that the safe operating area (SOA) of LDMOS shrank pronouncedly
Zhihui Yu +5 more
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An Oscillator Based on LDMOS Capacitor
2009 Sixth International Conference on Information Technology: New Generations, 2009The characteristic curve of the ordinary MOS capacitor is not monotonic, whereas the Laterally Diffused MOS (LDMOS) capacitor has a nearly ideal monotonic property. An oscillator based on LDMOS capacitor is designed and implemented using the standard 0.5µm CMOS technology, and various essential factors have been considered, such as the layout size, the
Huang Wei-hai +3 more
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