Results 121 to 130 of about 26,029 (244)

Electronic Transport in AlGaN/GaN Nanowires Under Ultraviolet Excitation and Edge Depletion Effect, Studied in a Wide Temperature Range

Nano Select, Volume 7, Issue 2, February 2026.
Electronic transport in AlGaN/GaN nanowires (NW) was studied under ultraviolet excitation in a wide temperature range. Significant changes in the conductivity of the structures were revealed and explained by the modulation of the space charge limited current (SCLC) effect. Temperature‐dependent measurements of transport and noise properties using noise
Svetlana Vitusevich, Vladislav V. Kaliuzhnyi, Mykola D. Tymochko, Alexander E. Belyaev   +3 more
wiley   +1 more source

Growth, characterization, and waveguide lasing of Yb3+, Lu3+, Gd3+ co-doped KY(WO4)2 thin layers [PDF]

, 2009
Monoclinic crystals of KY(WO4)2 (KYW) doped with different rare-earth ions are among the highly promising materials for building compact solid-state lasers.
Aravazhi, S., Geskus, D., Gunther, D., Pollnau, M., Wörhoff, K.   +4 more
core   +1 more source

Impact of Growth Temperature and Al/N Ratio on AlN Films Grown by Radio‐Frequency Molecular Beam Epitaxy on GaN Templates

physica status solidi (b), Volume 263, Issue 2, February 2026.
The growth mechanism of AlN films for high electron mobility transistors passivation is systematically investigated via radio‐frequency molecular beam epitaxy. While high‐temperature growth (700 °C) utilizes excess aluminum as a surfactant forming surface droplets, low‐temperature growth (300 °C) traps excess aluminum as defective metallic interlayers.
Trang Nakamoto, Yuma Kawakami, Takashi Fujii, Momoko Deura, Tsutomu Araki   +4 more
wiley   +1 more source

Bandgap Engineering On Demand in GaAsN Nanowires by Post‐Growth Hydrogen Implantation

Small, Volume 22, Issue 7, 2 February 2026.
The GaAsN bandgap in the GaAs/GaAsN core–shell nanowire shifts to lower energy for increasing N concentrations. By post‐growth H implantation the GaAsN bandgap is moved to a higher GaAs‐like energy through the formation of N–H complexes. By thermal annealing, these complexes can be partially dissolved, allowing to tune the GaAsN bandgap over a range of
Nadine Denis, Akant Sagar Sharma, Elena Blundo, Francesca Santangeli, Paolo De Vincenzi, Riccardo Pallucchi, Mitsuki Yukimune, Alexander Vogel, Ilaria Zardo, Antonio Polimeni, Fumitaro Ishikawa, Marta De Luca   +11 more
wiley   +1 more source

Seed-Layer-Assisted Liquid-Phase Epitaxial Growth of YIG Films on Single-Crystal Yttrium Aluminum Garnet Substrates: Evidence for Enhancement in Strain-Induced Anisotropy

Crystals
Epitaxial thick films of yttrium iron garnet (YIG) are ideal for use in microwave devices due to their low losses at high frequencies. This report is on the growth of strain-engineered YIG films by liquid-phase epitaxy (LPE) on yttrium aluminum garnet ...
Chaitrali Kshirsagar, Rao Bidthanapally, Ying Liu, Peng Zhou, Sahana Mukund, Aruna Bidthanapally, Hongwei Qu, Deepa Xavier, Subhabrat Samantaray, Venkatachalam Subramanian, Michael R. Page, Gopalan Srinivasan   +11 more
doaj   +1 more source

High‐Fidelity Dehydration and Low‐Artifact Scanning Electron Microscopy Measurement of DNA Self‐Assembled Nanopatterns

Small Structures, Volume 7, Issue 2, February 2026.
In this high‐fidelity dehydration and low‐artifact scanning electron microscopy (SEM) analysis method for DNA brick‐based crystalline films, Ni2+ ions suppress dehydration‐induced deformation of DNA nanopatterns on solid substrates and form semiconducting nickel phosphate derivatives, enhancing electrical and thermal conductivity.
Ruoyu Dai, HuiLi Lin, Songnan Liu, Fan Liang, Li Lin, Wei Sun, Jie Shen   +6 more
wiley   +1 more source

The Growth of Photoactive Porphyrin-Based MOF Thin Films Using the Liquid-Phase Epitaxy Approach and their Optoelectronic Properties. [PDF]

Materials (Basel), 2019
Ngongang Ndjawa GO, Tchalala MR, Shekhah O, Khan JI, Mansour AE, Czaban-Jóźwiak J, Weselinski LJ, Ait Ahsaine H, Amassian A, Eddaoudi M.   +9 more
europepmc   +1 more source

Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications. [PDF]

Sci Rep, 2019
Li HW, Chang CW.
europepmc   +1 more source

GaAsP on GaP top solar cells [PDF]

GaAsP on GaP top solar cells as an attachment to silicon bottom solar cells are being developed. The GaAsP on GaP system offers several advantages for this top solar cell.
Barnett, A. M., Mcneely, J. B., Negley, G. H.   +2 more
core   +1 more source

In-situ Liquid Phase Epitaxy: Another Strategy to Synthesize Heterostructured Core-shell Composites. [PDF]

Sci Rep, 2016
Wen Z, Wang G.
europepmc   +1 more source