Results 181 to 190 of about 26,029 (244)
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Journal of Crystal Growth, 1997
In the course of producing waveguides for laser applications, liquid phase epitaxy has been used to grow thin films of LiY1 − x − yLnxGdyF4 (Ln = Nd or Er) on LiYF4 substrates. Covered by a LiYF4 cladding layer, waveguides of low optical loss (< 0.3 dB/cm) were obtained.
P. Rogin, J. Hulliger
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In the course of producing waveguides for laser applications, liquid phase epitaxy has been used to grow thin films of LiY1 − x − yLnxGdyF4 (Ln = Nd or Er) on LiYF4 substrates. Covered by a LiYF4 cladding layer, waveguides of low optical loss (< 0.3 dB/cm) were obtained.
P. Rogin, J. Hulliger
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Applied Physics A Solids and Surfaces, 1991
This paper presents a comprehensive review of the method of liquid phase epitaxy (LPE) of semiconductors. In Sect. 1 the physical principles including diffusion-limited growth and solid-liquid phase diagrams are treated in detail. In Sect. 2 technological aspects and various kind of growth systems including industrial versions are described.
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This paper presents a comprehensive review of the method of liquid phase epitaxy (LPE) of semiconductors. In Sect. 1 the physical principles including diffusion-limited growth and solid-liquid phase diagrams are treated in detail. In Sect. 2 technological aspects and various kind of growth systems including industrial versions are described.
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2004
Liquid phase epitaxy (LPE) is the deposition from a liquid phase (a solution or melt) of a thin single crystalline layer isostructural with the substrate crystal [5.1]. Usually LPE is performed using a solution as the liquid phase, because this is advantageous against the cases when a melt is used.
Marian A. Herman +2 more
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Liquid phase epitaxy (LPE) is the deposition from a liquid phase (a solution or melt) of a thin single crystalline layer isostructural with the substrate crystal [5.1]. Usually LPE is performed using a solution as the liquid phase, because this is advantageous against the cases when a melt is used.
Marian A. Herman +2 more
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Vapor phase epitaxial growth of InP on liquid phase epitaxial In0.53Ga0.47As
Journal of Crystal Growth, 1981Abstract Electrical crystal properties of vapor phase epitaxial InP grown on LPE InGaAs film are discussed. The influence of various ambient gases on the InGaAs surface quality is studied at 675°C in an effort to get rid of thermal damage. Thermal deterioration of InGaAs can be suppressed by keeping the substrate in a slidable quartz holder filled ...
Nobuhiko Susa, Yoshiharu Yamauchi
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Epitaxial lateral overgrowth of InP by liquid phase epitaxy
Journal of Crystal Growth, 1995Abstract Epitaxial lateral overgrowth (ELO) of InP has been conducted for the first time by liquid phase epitaxy (LPE). The overgrowth has been studied for seeds in SiO 2 of 2.5 to 7 μm width using starlike and parallel patterns. A wide and flat ELO layer was grown on (001) and (111)B oriented substrates at growth temperature between 773 and 873 K ...
S. Naritsuka, T. Nishinaga
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Liquid phase epitaxy of hexagonal ferrites
Materials Research Bulletin, 1975Abstract Single crystal films of the hexagonal ferrite Zn 2 Y, having the chemical formula Ba 2 Zn 2 Fe 12 O 22 , were grown by the isothermal dipping method of liquid phase epitaxy using a PbOBaOB 2 O 3 flux. The substrates were flux-grown M-type hexagonal ferrite crystals having the chemical formula BaFe 12 O 19 .
F.S. Stearns, H.L. Glass
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Liquid phase epitaxial growth of AlGaSb
Journal of Crystal Growth, 1984Abstract Optimum conditions for the liquid phase epitaxial growth of AlGaSb and for the heat treatment of substrates were investigated. The high-temperature heat treatment of GaSb substrates prior to growth was found to damage the surface of the substrates, resulting in poor interfacial properties and formation of Ga inclusions.
Toshimi Wada +2 more
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2009
Liquid phase epitaxy (LPE) is a growth technique that can be suitable for photovoltaic applications regarding its simplicity and its capacity to produce high-quality thin film. The growth of Silicon proceeds from a molten solution (metal + Si), which is slowly cooled. Temperature range is typically 700–1,000°C and growth rate can be as high as 1 μm min-
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Liquid phase epitaxy (LPE) is a growth technique that can be suitable for photovoltaic applications regarding its simplicity and its capacity to produce high-quality thin film. The growth of Silicon proceeds from a molten solution (metal + Si), which is slowly cooled. Temperature range is typically 700–1,000°C and growth rate can be as high as 1 μm min-
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Dopant incorporation during liquid phase epitaxy
Journal of Applied Physics, 1981A quantitative treatment of nonequilibrium dopant incorporation during the growth by conventional liquid phase epitaxy (LPE) as well as by electroepitaxy has been put forward. Analytical expression for the stationary distribution of dopant concentration and potential in the solid near the liquid metal-semiconductor interface is derived.
K. Mazuruk, T. Bryśkiewicz
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LIQUID PHASE EPITAXY OF MAGNETIC GARNETS
Journal of Crystal Growth, 1975Abstract In designing rare earth iron garnet compositions for magnetic bubble applications it is usually necessary to deal with no fewer than three cations and often as many as six. LPE has become the dominant process for making garnet films from PbO-B 2 O 3 -Fe 2 O 3 fluxed melts.
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