Results 21 to 30 of about 117,202 (206)
Progress in EUV resist screening by interference lithography for high-NA lithography [PDF]
, 2021 The introduction of novel photoresists is a critical enabler of future technology nodes, including the upcoming high-NA EUVL deployment. The development of EUV materials is investigated within the scope of a resist screening program between ASML and PSI.
Vockenhuber, M. (author) +6 more
core +1 more source
Graphene nanoribbons with zigzag and armchair edges prepared by scanning tunneling microscope lithography on gold substrates [PDF]
, 2014 The properties of graphene nanoribbons are dependent on both the nanoribbon width and the crystallographic orientation of the edges. Scanning tunneling microscope lithography is a method which is able to create graphene nanoribbons with well defined edge
Dobrik, G. +7 more
core +1 more source
Cogent Engineering, 2018 Thin films of CuGaSe were deposited on n-Si (1 0 0) by rf magnetron sputtering from a stoichiometric CuGaSe2 target. The objective of this study was to characterize the thin film/Si heterojunction for potential photovoltaic applications, evaluate ...
M. A. Awaah +8 more
doaj +1 more source
Journal of Microelectronic Manufacturing, 2019 As the process comes into 28nm node and below, lithography struggles stronger between high resolution (high NA) and enough process window especially for hole layers (Contacts and Vias). Taking more care of process window may result in lower image quality
Qingchen Cao +3 more
doaj +1 more source
Micro-Pattern of Graphene Oxide Films Using Metal Bonding
Micromachines, 2020 Recently, graphene has been explored in several research areas according to its outstanding combination of mechanical and electrical features. The ability to fabricate micro-patterns of graphene facilitates its integration in emerging technologies such ...
Heba Abunahla +3 more
doaj +1 more source
Advanced coatings for next generation lithography
, 2022 Paper 94221K, 7 S.Beyond EUV lithography at 6.X nm wavelength has a potential to extend EUVL beyond the 11 nm node. To implement B-based mirrors and to enable their industrial application in lithography tools, a reflectivity level of > 70% has to be ...
Yulin, Sergiy A. +3 more
core +1 more source
Bubble‐pen lithography: Fundamentals and applications
Aggregate, 2022 Developing on‐chip functional devices requires reliable fabrication methods with high resolution for miniaturization, desired components for enhanced performance, and high throughput for fast prototyping and mass production.
Pavana Siddhartha Kollipara +3 more
doaj +1 more source
Molecules, 2013 In this article we present several developed and improved combinatorial techniques to optimize processing conditions and material properties of organic thin films. The combinatorial approach allows investigations of multi-variable dependencies and is the
Hans-Werner Schmidt +4 more
doaj +1 more source
FPGA based high-speed system solutions for innovative maskless lithography systems
, 2022 Paper 62832 KMaskless lithography is one of the possible solutions to manage the escalating mask costs and demands for faster production cycles. One of the major issues with the maskless lithography technology however is the management and transfer of ...
Talmi, M., Voss, S.-H.
core +1 more source
Lithographic process window optimization for mask aligner proximity lithography
, 2022 Paper 90520G, 11 S.We introduce a complete methodology for process window optimization in proximity mask aligner lithography. The commercially available lithography simulation software LAB from GenISys GmbH was used for simulation of light propagation ...
Hofmann, U. +9 more
core +1 more source