Results 131 to 140 of about 72,066 (264)
Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory
Advanced Science, EarlyView.Schematic and key features of the proposed forward‐forward physical unclonable neural network (FF‐PUNN), incorporating a concealable physical unclonable function (PUF) layer and forward‐forward (FF) learning. ABSTRACT The growing use of neural networks in privacy‐sensitive applications necessitates architectures that inherently protect both data and ...
Sung‐Ho Park +8 more
wiley +1 more source
Advanced Science, EarlyView.2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal +3 more
wiley +1 more source
Neuromodulator Dynamics Underlying Associative Learning in the Ventral Striatum's Olfactory Tubercle
Advanced Science, EarlyView.Using fiber photometry and genetically encoded sensors, the dynamic release patterns of four neuromodulators in the olfactory tubercle (OT)—a brain region overlapping with the olfactory cortex and ventral striatum—were systematically monitored in response to external rewards and distinct reward‐associated learning processes.
Maojun Hong +7 more
wiley +1 more source
Neuromorphic Motor Control with Electrolyte‐Gated Organic Synaptic Transistors
Advanced Electronic Materials, EarlyView.Electrolyte‐gated organic synaptic transistor (EGOST)‐based neuromorphic motor control systems integrate sensing, processing, and actuation by mimicking biological synapses. With advantages such as low power consumption, tunable synaptic plasticity, and mechanical flexibility, they are emerging as next‐generation core technologies for real‐time ...
Sung‐Hwan Kim +3 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.A biocompatible graphene/ZnO optical charge trap memory (CTM) is reported with over 54 h retention, enabled by interfacial photodoping. Using transient absorption spectroscopy and electrical analysis, charge transfer quenching is elucidated and reveal that a large energy barrier at the interface is responsible for long‐term memory retention.
Seungmin Shin +10 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta +9 more
wiley +1 more source
Organic Thin‐Film Transistors for Neuromorphic Computing
Advanced Electronic Materials, EarlyView.Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy +2 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong +4 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal +2 more
wiley +1 more source
Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
Advanced Electronic Materials, EarlyView.A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source