Results 41 to 50 of about 41,055 (209)
Spin torque resonant vortex core expulsion for an efficient radio-frequency detection scheme [PDF]
, 2015 Spin-polarised radio-frequency currents, whose frequency is equal to that of the gyrotropic mode, will cause an excitation of the core of a magnetic vortex confined in a magnetic tunnel junction.
A Chanthbouala +40 more
core +2 more sources
, 2017 We study the annealing stability of bottom-pinned perpendicularly magnetized magnetic tunnel junctions based on dual MgO free layers and thin fixed systems comprising a hard [Co/Ni] multilayer antiferromagnetically coupled to thin a Co reference layer ...
Couet, S. +7 more
core +1 more source
Effect of magnetic anisotropy on spin-dependent thermoelectric effects in nanoscopic systems [PDF]
, 2015 Conventional and spin-related thermoelectric effects in electronic transport through a nanoscopic system exhibiting magnetic anisotropy $-$with both uniaxial and transverse components$-$ are studied theoretically in the linear response regime.
Barnaś, Józef, Misiorny, Maciej
core +2 more sources
Magnetic tunnel junctions (MTJs)
Chinese Science Bulletin, 2001 We review the giant tunnel magnetoresistance (TMR) in ferromagnetic-insulator-ferromagnetic junctions discovered in recent years, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal films separated by an insulating thin tunnel barrier.
Haili Bai, Enyong Jiang
openaire +1 more source
Dynamic Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions [PDF]
Physical Review Letters, 2007 Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions oscillates with an applied voltage when electrons that tunnel directly into the barrier's conduction band interfere upon ...
Miller, Casey W. +5 more
openaire +3 more sources
Nature Communications, 2019 Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic ...
Aitian Chen +15 more
doaj +1 more source
AIP Advances, 2020 Recently, two-dimensional (2D) materials have attracted considerable interest for use in spintronic applications, especially hexagonal close-packed (hcp)-phase boron nitride (BN) as a tunnel barrier.
Chaoyi Peng +5 more
doaj +1 more source
Quantum Transport with Spin Dephasing: A Nonequilibrium Green's Function Approach
, 2007 A quantum transport model incorporating spin scattering processes is presented using the non-equilibrium Green's function (NEGF) formalism within the self-consistent Born approximation.
Ahmet Ali Yanik +7 more
core +1 more source
Inverse tunneling magnetoresistance in nanoscale magnetic tunnel junctions [PDF]
Physical Review B, 2005 11 pages, 4 figures, To be published in Phys. Rev. B (in press)
openaire +2 more sources
Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions [PDF]
Scientific Reports, 2014 While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things.
Loong, Li Ming +7 more
openaire +3 more sources