Results 71 to 80 of about 13,015 (262)

Memristor Crossbar-based Hardware Implementation of IDS Method

, 2010
Ink Drop Spread (IDS) is the engine of Active Learning Method (ALM), which is the methodology of soft computing. IDS, as a pattern-based processing unit, extracts useful information from a system subjected to modeling. In spite of its excellent potential
Bagheri-Shouraki, Saeed, Merrikh-Bayat, Farnood, Rohani, Ali   +2 more
core   +1 more source

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

Advanced Functional Materials, EarlyView.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane, Abhinav Gorthy, Luyao Zheng, Chiranth C Ravi, Haodong Wu, Jiamao Zheng, Neela H. Yennawar, Shashank Priya, Rashmi Jha, Bed Poudel   +9 more
wiley   +1 more source

Temporal Dynamics Makes Memristive Physical Unclonable Functions More Secure and Ultra‐Lightweight

Advanced Electronic Materials
Memristive physical unclonable function (PUF) is a recent entry to the list of security primitives, employing the intrinsic randomness of memristors. Although this represents a huge opportunity for memristors, all present memristive PUFs suffer from the ...
Yunpeng Guo, Cheng Ma, Huanglong Li
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Optically modulated dual‐mode memristor arrays based on core‐shell CsPbBr3@graphdiyne nanocrystals for fully memristive neuromorphic computing hardware

SmartMat, 2023
Artificial synapses and neurons are crucial milestones for neuromorphic computing hardware, and memristors with resistive and threshold switching characteristics are regarded as the most promising candidates for the construction of hardware neural ...
Fu‐Dong Wang, Mei‐Xi Yu, Xu‐Dong Chen, Jiaqiang Li, Zhi‐Cheng Zhang, Yuan Li, Guo‐Xin Zhang, Ke Shi, Lei Shi, Min Zhang, Tong‐Bu Lu, Jin Zhang   +11 more
doaj   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

Advanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav, Spyros Stathopoulos, Patrick Foster, Andreas Tsiamis, Mohamed Awadein, Hannah Levene, Themis Prodromakis   +6 more
wiley   +1 more source

BEOL‐Compatible Liquid‐Metal‐Printing of Ultrathin 2D Oxide Memtransistors and Its Applications in Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon, Seungyun Lee, Sunghan Cho, Donggyu Lee, Jehwan Park, Seongyun Yang, Jihyun Kim   +6 more
wiley   +1 more source

Analog HfxZr1‐xO2 Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network

Advanced Electronic Materials
Doped‐metal oxide‐based memristors, with the potential for improved switching performance and capability for multi‐bit information storage, are attractive candidates in the implementation of artificial neural network (ANN) hardware systems.
Quanzhou Zhu, Biyi Jiang, Jun Lan, Zeyu Hou, Yida Dong, Zhongrui Wang, Xuewei Feng, Mei Shen, Hongyu Yu, Kai Chen, Jiamin Li, Longyang Lin, Feichi Zhou, Yida Li   +13 more
doaj   +1 more source

Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems

Advanced Functional Materials, EarlyView.
MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley   +1 more source

Modeling Networks of Probabilistic Memristors in SPICE [PDF]

Radioengineering, 2021
Efficient simulation of stochastic memristors and their networks requires novel modeling approaches. Utilizing a master equation to find occupation probabilities of network states is a recent major departure from typical memristor modeling [Chaos ...
V. J. Dowling, V. A. Slipko, Y. V. Pershin   +2 more
doaj