Improved MRD 4H-SiC MESFET with High Power Added Efficiency [PDF]
Micromachines, 2019 An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology ...
Shunwei Zhu
exaly +4 more sources
An Improved UU-MESFET with High Power Added Efficiency [PDF]
Micromachines, 2018 An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor ...
Shunwei Zhu
exaly +4 more sources
Improved DRUS 4H-SiC MESFET with High Power Added Efficiency [PDF]
Micromachines, 2019 A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper.
Hujun Jia +7 more
doaj +2 more sources
Light effect in photoionization of traps in GaN MESFETs [PDF]
Papers in Physics, 2009 Trapping of hot electron behavior by trap centers located in buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simulation.
H. Arabshahi, A. Binesh
doaj +4 more sources
An Improved 4H-SiC MESFET with a Partially Low Doped Channel [PDF]
Micromachines, 2019 An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of ADS ...
Hujun Jia +7 more
doaj +2 more sources
A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region [PDF]
Micromachines, 2021 A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied.
Hujun Jia +4 more
doaj +2 more sources
A Time Delay Neural Network Based Technique for Nonlinear Microwave Device Modeling [PDF]
Micromachines, 2020 This paper presents a nonlinear microwave device modeling technique that is based on time delay neural network (TDNN). The proposed technique can accurately model the nonlinear microwave devices when compared to static neural network modeling method.
Wenyuan Liu +6 more
doaj +2 more sources
C-Band Resistive SiC-MESFET mixer [PDF]
IEEE Microwave and Wireless Components Letters, 2002 In this paper the design and characterization of a linear C-band single ended resistive SiC-MESFET mixer is presented. The mixer has a minimum conversion loss of 7.8 dB and has a third order intermodulation intercept point of 30.3 dBm.
Andersson, Kristoffer +3 more
core +2 more sources
Designing process and analysis of a new SOI-MESFET structure with enhanced DC and RF characteristics for high-frequency and high-power applications. [PDF]
PLoS ONEThis research introduces a new designing process and analysis of an innovative Silicon-on-Insulator Metal-Semiconductor Field-Effect (SOI MESFET) structure that demonstrates improved DC and RF characteristics.
Ahmad Ghiasi +5 more
doaj +2 more sources
Schottky-gated transistors using chitosan extracted from marine crab [PDF]
Scientific ReportsAmorphous chitosan nanoparticles (AChNPs) are extracted from marine crab shells for use as the active semiconductor material in paper-based electronics.
Mikio Fukuhara +5 more
doaj +2 more sources