Versatile Contact Engineering on β‐Ga2O3 Using EGaIn for Schottky Diodes and MESFET Applications
Advanced Electronic MaterialsBeta gallium oxide (β‐Ga2O3) has emerged as a promising ultrawide bandgap n‐type semiconductor for large‐area circuit integration and high‐power device applications in the field of 5G and AI technology.
Gyeong Seop Kim +4 more
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Hybrid multimodule DC–DC converters accelerated by wide bandgap devices for electric vehicle systems [PDF]
Scientific ReportsIn response to the growing demand for fast-charging electric vehicles (EVs), this study presents a novel hybrid multimodule DC–DC converter based on the dual-active bridge (DAB) topology.
Abdul Waheed +6 more
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A non linear model to analyze the DC performance of SiC MESFET
Ain Shams Engineering Journal, 2022 This paper presents a detailed analytical and non-linear mathematical model describing the I − V characteristics of submicron silicon Carbide (SiC) Metal semiconductor field effect transistor (MESFETs).
Asad Ali +4 more
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4H-SiC MESFET with darin-side and undoped region for modifying charge distribution and high power applications [PDF]
مجله مدل سازی در مهندسی, 2015 In this paper, a novel MESFET with an undoped region (DS-UR) and drain side-double recessed 4H-SiC metal semiconductor field effect transistor (MESFET) is presented.
Ali A. Orouji +2 more
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Фізика і хімія твердого тіла, 2020 In this paper described researched essentials and physical mechanisms of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer. Conducted computer modeling of MESFET with p-channel: distributions of potential, volumetric charge, current in ...
S. P. Novosyadliy +3 more
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Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation [PDF]
ITM Web of Conferences, 2019 The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling ...
Gromov Dmitry, Elesin Vadim
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Photosensitivity of MESFETs on Epitaxy Layers of GaAs with Monocrystalline Silicon Wafer
Фізика і хімія твердого тіла, 2020 Researched essentials and physical mechanisms which determine photosensitivity of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer under their illumination in impure zone absorption spectrum.
S. Novosyadly +3 more
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High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond. [PDF]
Adv Sci (Weinh)N‐channel diamond MOSFETs based on electronic grade phosphorous‐doped diamond are demonstrated. The MOSFET has the highest field‐effect electron mobility among all the wide‐bandgap semiconductors at high temperatures. This work enables the development of energy‐efficient and high‐reliability CMOS integrated circuits for high‐power electronics ...
Liao M, Sun H, Koizumi S.
europepmc +2 more sources
A 100-Element MESFET Grid Oscillator [PDF]
, 1990 A planar grid oscillator which combines the outputs of 100 devices quasi-optically is presented. The planar configuration is attractive because it is compatible with present-day IC fabrication techniques.
Kim, Moonil +4 more
core +1 more source
Design and Simulation of Microwave Oscillator [PDF]
Engineering and Technology Journal, 2009 This paper is concerned with the design and simulation of fixed frequency microwaveoscillator. Scattering parameters of the active device (MESFET-Afm02n8b) are used todesign and synthesize the oscillator.
Ahmed H. Reja +2 more
doaj +1 more source