Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer
Results in Physics, 2021 The normally-off hydrogen-terminated diamond metal–semiconductor field effect transistors (MESFETs) with a MoO3 passivation layer were fabricated on the CVD grown polycrystalline diamond substrate.
Zeyang Ren +7 more
doaj +1 more source
Instantaneous model of a MESFET for use in linear and nonlinear circuit simulations [PDF]
, 1992 A formal approach for nonlinear modeling of FETs is presented. The intrinsic transistor is described by current and charge generators, that are instantaneously dependent on the two internal voltages.
Corbella Sanahuja, Ignasi +2 more
core +2 more sources
Formation CMOS Schemes on GaAs with Self-Aligned Nitride and Silicide Gates
Фізика і хімія твердого тіла, 2016 Advanced integrated logic circuits on GaAs are mainly based on the using of n-channel field-effect transistors with gate Schottky (MESFET). To create the complementary MESFET integrated circuits the main problem is quite small Schottky barrier height ...
S. P. Novosjadly +2 more
doaj +1 more source
Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater [PDF]
, 1984 A low threshold buried heterostructure laser, a metal-semiconductor field effect transistor (MESFET), and a photodiode, have for the first time, been monolithically integrated on a semi-insulating GaAs substrate.
Bar-Chaim, N. +3 more
core +1 more source
A filter synthesis technique applied to the design of multistage broad-band microwave amplifiers [PDF]
, 2002 A method for designing multistage broad-band amplifiers based upon well-known filter synthesis techniques is presented. Common all-pole low-pass approximations are used to synthesize prototype amplifier circuits that may be scaled in frequency and ...
Hunter, I. +3 more
core +1 more source
Oxygen Plasma Treatment to Enable Indium Oxide MESFET Devices
Advanced Electronic Materials, 2023 Metal‐semiconductor field‐effect transistor (MESFET) devices based on pulsed laser deposition (PLD) grown In2O3 thin films with on–off ratios exceeding 6 orders of magnitude and low sub‐threshold swing values close to the thermodynamic limit are reported.
Fabian Schöppach +3 more
doaj +1 more source
Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +2 more
core +1 more source
Materials & Design, 2023 Metal-semiconductor field-effect transistors (MESFETs) offer the advantages of efficient gate control and low power consumption due to the large junction capacitance. However, the strong Fermi-level pinning caused by the metal-induced gap states makes it
Tianjiao Zhang +12 more
doaj +1 more source
Small Feature-Size Transistors Based on Low-Dimensional Materials: From Structure Design to Nanofabrication Techniques. [PDF]
Adv Sci (Weinh)With the unique device structures and the development of 2D materials, many transistors with ultrasmall feature‐sizes are successfully fabricated. This review summarizes the novel, advanced methods for fabricating ultrasmall nanoscale transistors, and discusses the challenges and future trends of ultrasmall devices.
Fu X, Liu Z, Wang H, Xie D, Sun Y.
europepmc +2 more sources
A 100-MIPS GaAs asynchronous microprocessor [PDF]
, 1994 The authors describe how they ported an asynchronous microprocessor previously implemented in CMOS to gallium arsenide, using a technology-independent asynchronous design technique.
Borkovic, Drazen +3 more
core +1 more source