Results 31 to 40 of about 6,463 (213)
Fault Interruption Scheme for HVDC System Using SiC-MESFET and VCB Based Hybrid Circuit Breaker
IEEE Access, 2021 As high voltage DC power system is gaining popularity, power electronic switching devices are becoming increasingly advanced to overcome problems of timely fault isolation.
Waheed A. Khan +6 more
doaj +1 more source
IEEE Journal of Microwaves, 2021 This article is the second in a continuing series of biographical pieces on individuals who have made significant contributions to microwave science, technology and applications over the course of their careers.
Peter H. Siegel
doaj +1 more source
A DC~1.6GHz DISTRIBUTEDAMPLIFIERWITHGaAs MESFETs
, 2016 In this study, a DC ~ 1.6 GHz bandwidth distributed amplifier (DA) is fabricated in printed circuit board (PCB). The scattering (S-) parameters of the distributed amplifier are measured and compared with simulated results. In characterization of the amplifier, small-signal microwave Sparameters given at some discrete frequencies of transistors are ...
Hiçdurmaz, Bahadır, Özzaim, Cengiz
openaire +3 more sources
Theory Based on Device Current Clipping to Explain and Predict Performance Including Distortion of Power Amplifiers for Wireless Communication Systems [PDF]
, 2008 Power amplifiers are critical components in wireless communication systems that need to have high efficiency, in order to conserve battery life and minimise heat generation, and at the same time low distortion, in order to prevent increase of bit ...
Tian, Yunjia, Tian, Yunjia
core +1 more source
Formation of delta-doped p-layer of hydrogen in natural and CVD-diamond crystals [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2011 A method is proposed for the hydrogen heat treatment of natural and CVD-diamond crystals, which can serve as an alternative to conventional method of forming H-layer in microwave plasma of hydrogen as a simpler one and more reproducible.
Altukhov A. A. +5 more
doaj +2 more sources
Diamond semiconductor technology for RF device applications [PDF]
, 2005 This paper presents a comprehensive review of diamond electronics from the RF perspective. Our aim was to find and present the potential, limitations and current status of diamond semiconductor devices as well as to investigate its suitability for RF ...
Davidson, Jimmy L. +4 more
core +1 more source
Gallium Arsenide Monolithic Optoelectronic Circuits [PDF]
, 1981 The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional
Bar-Chaim, N. +5 more
core +1 more source
GaAs optoelectronic neuron arrays [PDF]
, 1993 A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for
Grot, Annette +3 more
core
Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model [PDF]
, 2001 The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level.
Miles, R.E. +3 more
core +1 more source
physica status solidi (b), EarlyView.Schematic of a metal‐oxide‐semiconductor field‐effect transistor at pinch‐off together with the channel potential. We revisit the problem of the potential distribution in an inversion channel field effect transistor (metal–oxide‐semiconductor field‐effect transistor) within the gradual channel approximation.
Marius Grundmann
wiley +1 more source