Results 41 to 50 of about 6,463 (213)
Photoluminescence Spectra of MESFET and HEMT
Active and Passive Electronic Components, 1995 Photoluminescence spectroscopy has been employed in previous studies of semiconductor quantum wells and of buried interfaces in heterostructures. Nevertheless, the low amplitude of the signals collected, and the experimental difficulties, have limited ...
P. Conti
doaj +1 more source
GaAs-based optoelectronic neurons [PDF]
, 1993 An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented.
Kim, Jae H. +2 more
core +1 more source
Full Hydrodynamic Simulation of GaAs MESFETs
, 2004 A finite difference upwind discretization scheme in two dimensions is presented in detail for the transient simulation of the highly coupled non-linear partial differential equations of the full hydrodynamic model, providing thereby a practical ...
Aste, Andreas +2 more
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High‐Performance Ultra‐Wide‐Bandgap CaSnO3 Metal‐Oxide‐Semiconductor Field‐Effect Transistors
Advanced Electronic Materials, Volume 11, Issue 19, November 18, 2025.High‐performance enhancement‐mode MOSFET devices made from ultra‐wide bandgap semiconductor CaSnO3 are demonstrated for the first time with an on/off ratio exceeding 108, field‐effect mobility of 8.4 cm2 V−1 s−1, low contact resistance of 0.73 kΩ·µm, and a record breakdown field of ∼8.3 MV cm−1.
Weideng Sun +10 more
wiley +1 more source
Active and Passive Electronic Components, 2002 In this paper active inductor circuits are employed to assess their suitability for providing a tuning function in GaAs MMIC circuits. The specifications for a mobile handset amplifier and a bandpass filter operating from a 3 V supply rail are used as ...
J. Rodriguez Tellez +2 more
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Thermal Characterization of Ultrawide Bandgap Semiconductor Devices: A Review
Advanced Physics Research, Volume 4, Issue 9, September 2025.This review outlines advanced thermal characterization methods essential for ultrawide bandgap semiconductors like β‐Ga₂O₃, AlN, and diamond. It critically compares optical and electrical techniques, highlights their applications in power and RF systems, and evaluates recent innovations.
Hassan Irshad Bhatti, Xiaohang Li
wiley +1 more source
Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models [PDF]
, 1997 The authors present an efficient approach to evaluate the large-signal (LS) parametric sensitivity of active semiconductor devices under quasi-periodic operation through accurate, multidimensional physics-based models.
Bonani, S. +4 more
core +2 more sources
Analytical Solution to the Gradual Channel Approximation
physica status solidi (b), Volume 262, Issue 9, September 2025.An analytical solution is provided for the potential along the channel for junction and Schottky gate field effect transistors within the Shockley model. The solution is valid for all drain voltages up to the saturation or pinch‐off. The problem of the potential distribution in a field effect transistor within the gradual channel approximation is ...
Marius Grundmann
wiley +1 more source
Metal-Semiconductor Field-Effect Transistors Fabricated Using DVT Grown n-MoSe2 Crystals With Cu-Schottky Gates [PDF]
Журнал нано- та електронної фізики, 2011 Metal-semiconductor field-effect transistors (MESFETs) based on DVT grown MoSe2 crystals and Cu Schottky gate have been fabricated and studied.
C.K. Sumesh +3 more
doaj
Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs [PDF]
, 1996 The authors report how the performance of 0.12 μm GaAs pHEMTs is improved by controlling both the gate recess width, using selective dry etching, and the gate position in the source drain gap, using electron beam lithography.
Asenov, A. +6 more
core +1 more source