Results 51 to 60 of about 6,463 (213)
Fabrication and Characterization of Ga2O3 FinFETs on Patterned Silicon Substrate
Advanced Electronic Materials, Volume 11, Issue 11, July 2025.This study presents a Ga2O3‐based FinFET fabricated on a patterned silicon substrate using ALD. Electrical measurements reveal that post‐deposition annealing at 450 °C significantly improves the device performance, yielding a high Ion/Ioff ratio of 8.3 × 107, enhanced mobility of 8.5 cm2 V−1 s, and a breakdown voltage exceeding 200 V.
Hadi Ebrahimi‐Darkhaneh +4 more
wiley +1 more source
Advances in Materials Science and Engineering, 2014 A crack-free AlGaN/GaN heterostructure was grown on 4-inch Si (111) substrate with initial dot-like AlSiC precoverage layer. It is believed that introducing the AlSiC layer between AlN wetting layer and Si substrate is more effective in obtaining a ...
Jae-Hoon Lee, Jung-Hee Lee
doaj +1 more source
Functional Diamond, 2022 The irradiation effect of X-ray on the electrical properties of Schottky-barrier diode (SBD) and metal-semiconductor field-effect transistors (MESFET) based on the surface conductivity of hydrogen-terminated single-crystal diamond (SCD) epilayers was ...
Mingchao Yang +5 more
doaj +1 more source
Monolithic integration of an injection laser and a metal semiconductor field effect transistor [PDF]
, 1979 A new laser structure, the "T-laser", has been monolithically integrated with a MESFET on a semi-insulating GaAs substrate. Integration is achieved by means of a compatible structure in which the optically active layer of the laser also serves as the ...
Margalit, S. +3 more
core +1 more source
III-Vs Review, 1998 AbstractThere is much talk about the continuing dominance of the traditional MESFET in GaAs MMICs. Many industry observers would like to see their predictions fulfilled and this ubiquitous device make way for the HEMT and HBT. Such higher performance discrete devices are now commercially available and some are even in the brochures for several leading ...
openaire +1 more source
Engineering Reports, Volume 7, Issue 6, June 2025.This study explores how bidirectional semiconductor devices, enhanced by wide bandgap materials, significantly improve the efficiency and stability of DC and hybrid microgrids. Key findings demonstrate their potential in optimizing energy management and supporting renewable integration in advanced power systems.
Abdul Waheed +2 more
wiley +1 more source
Journal of King Saud University: Engineering Sciences, 1998 A high performance long-wavelength interdigitated metal-semiconductor-metal (MSM) photodetectors is reported in this paper. The photoabsorbing layer consists of an InGaAs/GaAs strained layer superlattice designed for light absorption in the long ...
Nacer Debbar
doaj +1 more source
A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior [PDF]
, 1998 The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involves the use of simplistic analytical formulae, which serve to obscure the more subtle physics of device action.
Baric, Adrijan, McNally, Patrick J.
core +1 more source
Thermal Stability of Schottky Contacts and Rearrangement of Defects in β‐Ga2O3 Crystals
Advanced Electronic Materials, Volume 11, Issue 1, January 2025.This study investigates the thermal stability of various Schottky contacts (Au, Pt, and Ni) on β‐Ga2O3 under a 650 K thermal load. Intermixing of atoms at the interface between metal and β‐Ga2O3 is shown, with Ni oxidizing, and Au and Pt alloying with the Ga.
Palvan Seyidov +9 more
wiley +1 more source
Radiation Characteristics of 3D Resonant Cavity Antenna with Grid-Oscillator Integrated Inside
International Journal of Antennas and Propagation, 2014 A three-dimensional (3D) rectangular cavity antenna with an aperture size of 80 mm × 80 mm and a length of 16 mm, integrated with a four-MESFET transistor grid-oscillator, is designed and studied experimentally.
L. A. Haralambiev, H. D. Hristov
doaj +1 more source