Results 61 to 70 of about 6,463 (213)
Semiconductor Membrane Exfoliation: Technology and Application
Advanced Electronic Materials, Volume 11, Issue 1, January 2025.This review systematically outlines diverse technical strategies commonly employed by the scientific community to achieve exfoliation‐transfer of semiconductor structures from conventional rigid substrates. Simultaneously, it also highlights the potential of membrane through various exfoliation‐transfer methods in multifunctional (opto)electronic ...
Hongliang Chang +7 more
wiley +1 more source
Results in EngineeringThis paper investigates the electrical properties of a 0.3 µm channel length Silicon-On-Insulator (SOI) Metal-Semiconductor Field-Effect Transistor (MESFET) with a nickel (Ni) metal region in the buried oxide layer. The simulation was conducted using the
Hamed Mohammadi, Mohsen Hayati
doaj +1 more source
Development of a 1.5-tonne niobium gravitational radiational antenna [PDF]
, 1987 Copyright @ American Institute of PhysicsA 1.5‐tonne Nb gravitational radiation antenna is described. Problems associated with a noncontacting magnetically levitated parametric upconverter transducer are discussed, and a system using a bonded microwave ...
Blair, DG +4 more
core +1 more source
Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies
Advanced Electronic Materials, Volume 11, Issue 1, January 2025.The advanced ultra‐wide bandgap semiconductor material β‐Ga2O3 is highly favored for its exceptional material properties. This sudy provides a comprehensive review of its developments in areas such as materials, power devices, and RF devices. The current status of its commercialization process is outlined, along with an analysis of the challenges it is
Sihan Sun +5 more
wiley +1 more source
Switched-capacitor neural networks for linear programming [PDF]
, 1988 A circuit for online solving of linear programming problems is presented. The circuit uses switched-capacitor techniques and is thus suitable for monolithic implementation.
Domínguez Castro, Rafael +3 more
core +1 more source
Electronics Letters, 1988 A 2.4 GHz MESFET sampler is designed and tested. Transistor nonlinearities as well as propagation effects on transmission lines are precisely modelled. Waveforms of dynamic signals at the sampler ports are measured and analysed. They allow the prediction of five to ten times better performances with a high speed MESFET.
H. Hafdallah, G. Vernet, R. Adde
openaire +1 more source
AlGaN/GaN Dual‐Gate HEMT Using a High Al Mole Fraction and Thin Barrier Layer
Electronics Letters, Volume 61, Issue 1, January/December 2025.This article examines the use of a high Al mole fraction (x = 0.34) and a thin barrier layer (t = 11.5 nm) in AlGaN/GaN high electron mobility transistors (HEMTs) with both single‐gate and dual‐gate configurations. Single‐gate HEMTs with the current epitaxial structure demonstrated an improved maximum drain current and transconductance, as well as ...
Yuji Ando +4 more
wiley +1 more source
Физика волновых процессов и радиотехнические системы, 2013 Field and volume charge structure in the junction between semiinsulating chrome doped substrate and n-channel of GaAs MESFET was analyzed by means of a computational modeling. It was used a four-level model of semiinsulating GaAs with deep levels.
A.M. Bobreshov +2 more
doaj
Recent progress on heteroepitaxial growth of single crystal diamond films
Electron, Volume 2, Issue 4, November 2024.Diamond exhibits exceptional semiconductor properties across diverse applications. Heteroepitaxial growth offers a route to diamond wafers via chemical vapor deposition. By exploiting the lattice matching to minimize interfacial strain, iridium substrates enable scalable growth of high‐quality single‐crystal diamond films suitable for power electronics,
Vedaste Uwihoreye +5 more
wiley +1 more source
A 100-MESFET planar grid oscillator [PDF]
, 1991 A 100-MESFET oscillator which gives 21 W of CW effective radiated power (ERP) with a 16-dB directivity and a 20% DC-to-RF conversion efficiency at 5 GHz is presented. The oscillator is a planar grid structure periodically loaded with transistors.
Kim, Moonil +3 more
core +1 more source