Results 71 to 80 of about 6,463 (213)

Large signal 2nd harmonic on wafer MESFET characterization [PDF]

, 1990
An automatic test set which performs a real time harmonic load-pull characterization is proposed. An active load technique is used in order to set the load at the test frequency and its harmonics and a complete set of device parameters useful for power ...
A. Ferrero, U. Pisani
core   +1 more source

Schottky Diode Leakage Current Fluctuations: Electrostatically Induced Flexoelectricity in Silicon

Advanced Science, Volume 11, Issue 38, October 16, 2024.
Electrostatic attractive forces between a Pt atomic force microscopy (AFM) tip and an oxide‐free silicon surface lead to a strain gradient in the semiconductor, which results in a flexoelectric junction voltage. Flexoelectricity increases diode leakage and shifts the Schottky junction knee voltage away from the origin, accounting for parasitic effects ...
Carlos Hurtado, Melanie MacGregor, Kai Chen, Simone Ciampi   +3 more
wiley   +1 more source

A Comparison Between GaAs Mesfet and Si NMOS ESD Behaviour

Active and Passive Electronic Components, 1987
Work is in hand at Loughborough University to investigate and compare the ESD sensitivity of GaAs D-MESFETs and unprotected enhancement mode NMOS structures.
A. J. Franklin, E. A. Amerasekera, D. S. Campbell   +2 more
doaj   +1 more source

Dual internal model control with improved load current feedback for enhanced dynamic performance in aircraft high‐voltage direct current brushless generator

IET Electric Power Applications, Volume 18, Issue 10, Page 1174-1186, October 2024.
A dual internal model control method utilising improved load current feedback to enhance the dynamic performance of aircraft HVDC wound rotor synchronous generator system under load variations is proposed. It employs internal model controllers in both voltage and current loops, thereby significantly augmenting the system's disturbance rejection ...
Heng Shi, Zhuoran Zhang
wiley   +1 more source

Boltzmann Switching MoS2 Metal–Semiconductor Field‐Effect Transistors Enabled by Monolithic‐Oxide‐Gapped Metal Gates at the Schottky–Mott Limit

Advanced Materials, Volume 36, Issue 29, July 18, 2024.
Herein, van der Waals Schottky‐gated MoS2 metal–semiconductor field‐effect transistors are developed, mitigating two primary sources of Fermi‐level pinning—metal‐induced gap states and disorder‐induced gap states. Consequently, the devices exhibit ideal hysteresis‐free transistor characteristics with a subthreshold swing of 60 mV dec−1 at 300 K ...
Yeon Ho Kim, Wei Jiang, Donghun Lee, Donghoon Moon, Hyun‐Young Choi, June‐Chul Shin, Yeonsu Jeong, Jong Chan Kim, Jaeho Lee, Woong Huh, Chang Yong Han, Jae‐Pil So, Tae Soo Kim, Seong Been Kim, Hyun Cheol Koo, Gunuk Wang, Kibum Kang, Hong‐Gyu Park, Hu Young Jeong, Seongil Im, Gwan‐Hyoung Lee, Tony Low, Chul‐Ho Lee   +22 more
wiley   +1 more source

A new monolithic approach for mid-IR focal plane arrays [PDF]

, 2016
Antimonide-based photodetectors have recently been grown on a GaAs substrate by molecular beam epitaxy (MBE) and reported to have comparable performance to the devices grown on more expensive InSb and GaSb substrates.
Aziz, Mohsin, Cumming, David R.S., Khalid, Ata, Pusino, Vincenzo, Steer, Matthew J., Xie, Chengzhi   +5 more
core   +1 more source

Silicon Carbide Power MESFET [PDF]

, 2012
The wide band gap materials, such as silicon carbide (SiC) [1-3] and gallium nitride (GaN) [4-6], are the third generation semiconductor materials, which had been developed after the Silicon (Si) and gallium arsenide (GaAs) materials. Especially, the SiC material is very wellsuited for the high voltage, high power and high temperature applications due ...
Yang, Yintang, Duan, Baoxing, Zhang, Xianjun   +2 more
openaire   +2 more sources

Active quasi circulator: Comprehensive review and performance comparison

Engineering Reports, Volume 6, Issue 6, June 2024.
To cope up with the increased data transmission rate due to the modern multiband wireless communication systems, the three‐port circulator must be equipped with the ability to operate in different frequency levels while having adequate bandwidth. Thus, designing circulator as an antenna interface device becomes a challenging, particularly active‐quasi ...
Mehedi Hasan, Sujan Chowdhury, Hasan U. Zaman   +2 more
wiley   +1 more source

A triple-oxide SOI-MESFET with enhanced breakdown voltage and power density via buried aluminum engineering

e-Prime: Advances in Electrical Engineering, Electronics and Energy
This study presents a novel triple-oxide SOI-MESFET structure with an engineered aluminum layer in the buried oxide (BOX) to simultaneously enhance breakdown voltage and power density.
Hamed Mohammadi, Mohsen Hayati
doaj   +1 more source

A Finite-Volume Scheme for a Spinorial Matrix Drift-Diffusion Model for Semiconductors [PDF]

, 2015
An implicit Euler finite-volume scheme for a spinorial matrix drift-diffusion model for semiconductors is analyzed. The model consists of strongly coupled parabolic equations for the electron density matrix or, alternatively, of weakly coupled equations ...
Chainais-Hillairet, Claire, Jüngel, Ansgar, Shpartko, Polina   +2 more
core   +4 more sources