Diamonds in the Current: Navigating Challenges for the Integration of Diamond in Power Electronics
physica status solidi (a), Volume 221, Issue 8, April 2024.Delve into the intricacies of power electronics with diamond as semiconductors. The path is not straight, and the article explores the potential of diamond to meet the future challenges, focusing on breakdown voltage, specific resistance, and thermal considerations. It discusses the optimization of diamond surfaces, addressing defect densities to rival
David Eon
wiley +1 more source
ANNs in Bias Dependant Small-Signal and Noise Modeling of Microwave FETs [PDF]
Telfor Journal, 2010 In this paper an efficient procedure for determination of small-signal and noise behavior of microwave transistors for various bias conditions is proposed. An empirical transistor noise model based on an equivalent circuit (improvement of Pospieszalski’s
V. Marković +2 more
doaj
Wave techniques for noise modeling and measurement [PDF]
, 1992 The noise wave approach is applied to analysis, modeling, and measurement applications. Methods are presented for the calculation of component and network noise wave correlation matrices.
Rutledge, David B., Wedge, Scott W.
core +1 more source
An approach to harmonic load- and source-pull measurements for high-efficiency PA design [PDF]
, 2004 High-efficiency power-amplifier design requires numerous efforts to investigate both input and output harmonic terminations effects. A simplified theoretical approach to clarify the relevance of such terminations is presented here, and design criteria to
Colantonio, P. +3 more
core +2 more sources
Array concepts for solid-state and vacuum microelectronics millimeter-wave generation [PDF]
, 1989 The authors have proposed that the increasing demand for contact watt-level coherent sources in the millimeter- and submillimeter-wave region can be satisfied by fabricating two-dimensional grids loaded with oscillators and multipliers for quasi-optical ...
Hwu, Ruey J. +6 more
core +1 more source
Temperature Effects on The Electrical Characteristics of In0.15Ga0.85As Pseudomorphic High-Electron-Mobility Transistors [PDF]
Journal of Electrical and Electronics Engineering, 2017 Nowadays, GaAs-based HEMTs and pseudomorphic HEMTs are speedily replacing conventional MESFET technology in military and commercial applications including, communication, radar and automotive technologies having need of high gain, and low noise figures ...
BECHLAGHEM Fatima Zohra +2 more
doaj
Results in Physics, 2017 In this article, one and two-dimensional hydrodynamical models of semiconductor devices are numerically investigated. The models treat the propagation of electrons in a semiconductor device as the flow of a charged compressible fluid.
Ubaid Ahmed Nisar +2 more
doaj +1 more source
The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga2O3 Metal-Semiconductor Field-Effect Transistors. [PDF]
Materials (Basel), 2022 Ro HS, Kang SH, Jung S.
europepmc +1 more source
Microwave performance of an optically controlled AlGaAs/GaAs high electron mobility transistor and GaAs MESFET [PDF]
Direct current and also the microwave characteristics of optically illuminated AlGaAs/GaAs HEMT are experimentally measured for the first time and compared with that of GaAs MESFET.
Bhasin, Kul. B., Simons, Rainee N.
core +1 more source
Si-doped β-(AlxGa1−x)2O3 MESFETs grown via CIS-MOCVD on (010) β-Ga2O3 [PDF]
APL Electronic DevicesIn this work, we demonstrate device fabrication and characterization of ultrawide bandgap (UWBG) β-(AlxGa1−x)2O3 channel metal–semiconductor field-effect transistors (MESFETs) with Si-implanted source/drain contacts. Films of Si-doped β-(AlxGa1−x)2O3 and
Hannah N. Masten +10 more
doaj +1 more source