Results 91 to 100 of about 213,422 (311)
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Advanced Functional Materials, EarlyView.Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source
3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance
Kongzhi Yu Xinxi Jishu, 2017 It developed a new enhanced trench metal oxide semiconductor (TMOS+) 3 300 V IGBT with soft punch through (SPT) concept and n-well layer. Its on-state voltage (Tj=150 ℃ ) is 25% lower than that of 3 300 V planar enhanced double diffused metal oxide ...
ZHOU Feiyu +5 more
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Theoretical and experimental studies of radiation-induced damage to semiconductor surfaces and the effects of this damage on semiconductor device performance Semiannual progress report no. 4, 1 Sep. 1965 - 28 Feb. 1966 [PDF]
Experimental studies on semiconductor surface recombination velocity, metal oxide semiconductor capacitors, and deep lying centers in ...
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Advanced Functional Materials, EarlyView.Trap state engineering in inverted organic photodetectors (OPDs) is achieved via combined layer‐by‐layer (LbL) processing and poly(N‐vinylcarbazole) (PVK) incorporation. LbL reduces the trap density while PVK additives gradually shift trap states from shallow band‐edge to deep mid‐gap levels, tailoring the energy distribution.
Jingwei Yi +10 more
wiley +1 more source
MOS field-effect-transistor technology [PDF]
Metal oxide semiconductor field effect transistor circuit development and laminated electronic packaging for computer storage ...
Boesenberg, W. A. +4 more
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Four phase logic systems [PDF]
, 1974 A four-phase logic system is provided which includes at least four logic networks connected in parallel between a single power line and a reference potential.
Kinell, D. K., Petersen, H. L.
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p-GaAs nanowire MESFETs with near-thermal limit gating
, 2018 Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics.
Caroff, P. +7 more
core +2 more sources
Novel readout circuit architecture for CMOS image sensors minimizing RTS noise [PDF]
, 2011 This letter presents a novel readout architecture and its associated readout sequence for complementary metal–oxide– semiconductor (CMOS) image sensors (CISs) based on switch biasing techniques in order to reduce noisy pixel numbers induced by in-pixel
Magnan, Pierre +1 more
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Advanced Functional Materials, EarlyView.This review highlights how machine learning (ML) algorithms are employed to enhance sensor performance, focusing on gas and physical sensors such as haptic and strain devices. By addressing current bottlenecks and enabling simultaneous improvement of multiple metrics, these approaches pave the way toward next‐generation, real‐world sensor applications.
Kichul Lee +17 more
wiley +1 more source
An overview of the synthesis of CuO-ZnO nanocomposite for environmental and other applications
Nanotechnology Reviews, 2018 In the field of environmental science, metal oxide nanocomposites have gained a great attention for both theoretical and experimental aspects of their upgradation because of their wide range of practical applications such as catalysts, sensors, hydrogen ...
Das Susmita, Srivastava Vimal Chandra
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