Results 51 to 60 of about 26,223 (245)

AMiBA: Broadband Heterodyne CMB Interferometry [PDF]

, 2009
The Y. T. Lee Array for Microwave Background (AMiBA) has reported the first science results on the detection of galaxy clusters via the Sunyaev Zel'dovich effect. The science objectives required small reflectors in order to sample large scale structures (
Bennett, Chao-Te Li, Chia-Hao Chang, Chih-Chiang Han, Chih-Wei Huang, Clarricoats, Claude, Derek Kubo, Ediss, Fu-Cheng Wang, Goldsmith, Guo-Chin Liu, Halverson, Hiroaki Nishioka, Ho, Ho, Homin Jiang, Huei Wang, Hwang, Jiun-Huei Proty Wu, Kai-Yang Lin, Keiichi Umetsu, Koch, Lin, Liu, Lo, Michael Kesteven, Ming-Tang Chen, Nishioka, Pablo Altamirano, Padin, Patrick Koch, Paul T. P. Ho, Peter Oshiro, Philippe Raffin, Pierre Martin-Cocher, Pospieszalski, Samtleben, Sandor M. Molnar, Shu-Hao Chang, Su-Wei Chang, Sunyaev, Sunyaev, Tah-Hsiung Chu, Tashun Wei, Tzi-Dar Chiueh, Umetsu, Warwick Wilson, Weinreb, Wollack, Wu, Yau-De Huang, Yu-Wei Liao, Yuh-Jing Hwang   +53 more
core   +2 more sources

Facies mosaic distribution and stratigraphic disorder of a mixed carbonate–siliciclastic tidal succession

Sedimentology, Volume 73, Issue 1, Page 40-82, January 2026.
ABSTRACT Complex stratigraphic arrangements may be generated through lateral facies transitions from the strata of aeolian depositional systems into bordering peritidal deposits. In such scenarios, sedimentary architectural complexity and associated facies heterogeneities are governed by the interplay between autogenic processes inherent to tidal ...
Victor J. P. Hême de Lacotte, Chester H. C. Davies, Briony J. Bowler, Stuart M. Clarke, A. Graham Leslie, Douglas A. Sprinkel   +5 more
wiley   +1 more source

50 nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications [PDF]

, 2006
We report well-scaled 50 nm GaAs metamorphic HEMTs (mHEMTs) with DC power consumption in the range 1-150 ΜW/Μ demonstrating f_T of 30-400 GHz.
Elgaid, K., Holland, M., McLelland, H., Moran, D.A.J., Stanley, C., Thayne, I., Thoms, S.   +6 more
core   +1 more source

Impact of Parasitic Conductive Interfaces on the DC and RF Performance of GaN‐on‐GaN HEMTs

physica status solidi (a), Volume 222, Issue 22, November 2025.
GaN‐on‐GaN HEMTs suffering from a parasitic conductive interface show a power added efficiency drop from an expected 50 % to 15 %. The interface forms on GaN wafers prior to epitaxy due to Si contamination to absorb RF power, introduce propagation loss and loading effects, reduce gain by 50 %, and fmax and Pout by 40 % compared to GaN‐on‐SiC HEMTs ...
Amer Bassal, Serguei Chevtchenko, Frank Schnieder, Thomas Flisgen, Olof Bengtsson, Frank Brunner, Oliver Hilt   +6 more
wiley   +1 more source

On‐chip GaAs‐based dual‐band bandpass filters/isolators (DBPFIs)

Electronics Letters, 2023
MMIC co‐designed RF components exhibiting the collocated RF signal processing actions of a dual‐band bandpass filter and an RF isolator (DBPFI) are presented. They are based on in‐parallel cascaded bandpass filters/isolators that operate at two different
Andrea Ashley, Dimitra Psychogiou
doaj   +1 more source

Physico‐Chemical, Microstructural, and Cooking Characteristics of Faba Bean (Vicia faba) Varieties From New Zealand

Legume Science, Volume 7, Issue 3, September 2025.
ABSTRACT This research examines the physical and microstructural properties of New Zealand faba beans (Vicia faba), with a focus on their influence on swelling, hydration, and cooking characteristics. Four native varieties (Early Long Pod, Evergreen, Coles Dwarf, and Janet) were studied.
Navneet, Jaspreet Singh, Nneka I. Ajomiwe, Lovedeep Kaur   +3 more
wiley   +1 more source

An Examination of Aerosol Jet‐Printed Surface Roughness and its Impact on the Performance of High‐Frequency Electronics

Advanced Engineering Materials, Volume 27, Issue 15, August 2025.
This study explores aerosol jet‐printed (AJP) surface roughness, its effects on the performance of microwave electronics, and its process contributors. First, an electromagnetic model is vetted for AJP's unique roughness signature. Simulations are built which show process‐induced roughness is as significant as conductor resistivity in driving microwave
Christopher Areias, Alkim Akyurtlu
wiley   +1 more source

A 43-Gbps Lithium Niobate Modulator Driver Module [PDF]

, 2002
This paper describes the realization of a 43-Gbps Lithium Niobate modulator driver module. The NRZ driver module utilizes four stages of GaAs p-HEMT MMIC amplifiers integrated with an output level detector and feedback loop to provide thermal stability ...
Camargo, E., Franzwa, E., Fukugawara, T., Gentrup, M., Hicks, G., Notomi, S., O'Neal, M., Ragle, R., Virk, R.S.   +8 more
core   +1 more source

A Temperature‐Dependent Linear RF Switch Model for Common‐Gate High‐Frequency GaN HEMT Transistors

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Volume 38, Issue 4, July/August 2025.
ABSTRACT This paper reports a temperature dependent high frequency monolithic microwave integrated circuit (MMIC) linear radio frequency (RF) switch modeling technique for gallium nitride (GaN) RF switch transistors. Linear model extraction has primarily focused on common source (CS) RF transistors.
Dave Frey, Dashiel Matlock, Edward Gebara, Nicholas C. Miller   +3 more
wiley   +1 more source

Four-channel GaAs multifunction chips with bottom RF interface for Ka-band SATCOM antennas

ETRI Journal
Receiver and transmitter monolithic microwave integrated circuit (MMIC) multifunction chips (MFCs) for active phased-array antennas for Ka-band satellite communication (SATCOM) terminals have been designed and fabricated using a 0.15-μm GaAs ...
Jin-Cheol Jeong, Junhan Lim, Dong-Pil Chang   +2 more
doaj   +1 more source