Results 91 to 100 of about 24,527 (216)

Highly conformal and high-ionic conductivity thin-film electrolyte for 3D-structured micro batteries: Characterization of LiPON film deposited by MOCVD method

AIP Advances, 2017
This paper reports a lithium phosphorus oxynitride (LiPON) thin-film electrolyte deposited using a metalorganic-chemical vapor deposition (MOCVD) method for 3D-structured micro batteries.
Takashi Fujibayashi, Yusuke Kubota, Katsuhiko Iwabuchi, Naoki Yoshii   +3 more
doaj   +1 more source

Gate tunable MoS2 memristive neuron for early fusion of visual and acoustic signals spiking neural network

InfoMat, Volume 8, Issue 4, April 2026.
Current brain‐inspired computing chips require complex additional circuits to operate effectively, making them bulky and inefficient. We have created a single adjustable artificial neuron device made from MoS2 that can dynamically modulate its behavior on demand, eliminating the need for extra circuits and enabling it to process different types of ...
Yanming Liu, Yuyang Peng, Yuwan Hong, Peigen Zhang, Daixuan Wu, Fan Wu, Zhoujie Pan, Jingtai Wu, Yuxin Jin, Tian‐Ling Ren, He Tian   +10 more
wiley   +1 more source

Precision Local Strain Engineering in 2D Semiconductors and Their van der Waals Heterostructures

Small, Volume 22, Issue 20, 7 April 2026.
This review highlights recent advances in experimental techniques for mapping and quantifying strain, strategies for imparting programmable local strain via substrate, stressor, and interlayer coupling, and strain‐engineered functionalities in electronics, photonics, and quantum devices.
Byeong Chan Kim, Yoona Kim, Gwan‐Hyoung Lee   +2 more
wiley   +1 more source

Single-step Au-catalysed synthesis and microstructural characterization of core–shell Ge/In–Te nanowires by MOCVD

Materials Research Letters, 2018
We report on the self-assembly of core–shell Ge/In–Te nanowires (NWs) on single crystal Si substrates by Metalorganic Chemical Vapour Deposition (MOCVD), coupled to the Vapour–Liquid–Solid (VLS) mechanism, catalysed by Au nanoparticles (NPs). The NWs are
Raimondo Cecchini, Simone Selmo, Claudia Wiemer, Enzo Rotunno, Laura Lazzarini, Marta De Luca, Ilaria Zardo, Massimo Longo   +7 more
doaj   +1 more source

Gallium Nitride‐Based Electrode Materials for Supercapacitors: From Wide Band Semiconductor to Energy Storage Platform

Small, Volume 22, Issue 20, 7 April 2026.
This review focuses on capability of Gallium Nitride (GaN)‐based supercapacitors, bordering the advancement from porous architecture to novel hybrid nanostructures. It systematically investigates synthesis approaches and charge storage mechanisms that generate remarkable energy densities and competent cyclic stability.
Farasat Haider, Batool Esmat, Ali Raza Kashif, Muhammad Shahid Khan, Akif Safeen, Basit Ali Khan, Karim Khan, Basit Ali   +7 more
wiley   +1 more source

Toward ferroelectric AlN/GaN heterostructures and sputtered III-N thin films with metal organic chemical vapor deposition-like texture

Communications Materials
Merging III-N-technology and wurtzite ferroelectricity could enable novel devices with enhanced functionality, for instance, harsh environment ferroelectric non-volatile memories and neuromorphic components.
Georg Schönweger, Niklas Wolff, Md Redwanul Islam, Isabel Streicher, Stefano Leone, Lorenz Kienle, Simon Fichtner   +6 more
doaj   +1 more source

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN

Nanomaterials, 2018
Yellow luminescence (YL) of unintentionally doped GaN (u-GaN) peaking at about 2.2 eV has been investigated for decades, but its origin still remains controversial. In this study, ten u-GaN samples grown via metalorganic chemical vapor deposition (MOCVD)
Feng Liang, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Ping Chen, Jing Yang, Shuangtao Liu, Yao Xing, Liqun Zhang, Mo Li, Yuantao Zhang, Guotong Du   +12 more
doaj   +1 more source

Scalable Growth and Properties of (AlxGa1−x)2O3 Thin Films on 2‐ and 4‐Inch Sapphire via Close‐Coupled Showerhead MOCVD

physica status solidi (a), Volume 223, Issue 6, 20 March 2026.
(AlxGa1−x)2O3 thin films are grown by Close‐Coupled Showerhead metalorganic chemical vapour deposition to investigate aluminium incorporation, growth kinetics and optical behaviour on c‐plane sapphire. The study reveals near‐ideal alloying, composition‐dependent growth rates and tuneable bandgaps.
Ciaran Paul Llewelyn, Zdenko Zápražný, Edmund Dobročka, Filip Gucmann, Dan Lamb   +4 more
wiley   +1 more source

Wafer bonding and layer transfer processes for 4-junction high efficiency solar cells [PDF]

, 2002
A four-junction cell design consisting of InGaAs, InGeAsP, GaAs, and Ga0.5In0.5P subcells could reach 1 x AMO efficiencies of 35.4%. but relies on the integration of non-lattice-matched materials.
Ahn, Chang-Geun, Atwater, Harry A., Chu, Charles, Fontcuberta i Morral, Anna, Iles, Peter A., Wanlass, Mark W., Zahler, James M.   +6 more
core  

MOCVD of Cobalt Oxide Using Co-Actylacetonate As Precursor: Thin Film Deposition and Study of Physical Properties [PDF]

Журнал нано- та електронної фізики, 2011
Metal Organic Chemical Vapor Deposition (MOCVD) is the deposition method of choice for achieving conformal uniform (composition and thickness) continuous thin films over the micron geometry topology necessary for implementing advanced devices. Thin films
S.M. Jogade, P.S. Joshi, B.N. Jamadar, D.S. Sutrave   +3 more
doaj