Results 101 to 110 of about 24,527 (216)

Technique of failure analysis for gate oxide defect of Bi-polar CMOS Diffuse (BCD) technology [PDF]

, 2013
This research presents failure analysis (FA) works on gate oxide defect of Bi polar CMOS Diffuse (BCD) technology. The latent problem with electrical degradation in the CMOS performance is due to gate oxide defect.
Abdullah, Farisal
core  

Mie-resonances, infrared emission and band gap of InN

, 2003
Mie resonances due to scattering/absorption of light in InN containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of papers.
A. Kasic, A. Kavokin, A. Vasson, B. Monemar, C. Stampfl, D. D. Solnyshkov, D. D. Nolte, G. Mie, H. Amano, I. Tamm, J. Leymarie, J. C. Maxwell-Garnett, K. Shimono, L. Tansley, L. D. Landau, P. S. Kop’ev, R. Y. Koyama, S. V. Ivanov, S. V. Ivanov, T. Inushima, T. V. Shubina, U. Kreibig, V. A. Vekshin, V. N. Jmerik, V. V. Sobolev   +24 more
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Emcore's MOCVD production seminar

III-Vs Review, 2003
AbstractThis year’s International Conference on Nitride Semiconductors (ICNS-5) saw a gathering of GaN experts discussing their work. Representatives from companies and Japanese universities specialising in nitride production attended a series of lectures providing insight into research and commercial developments in GaN processing.This is a short news
openaire   +1 more source

In-doped Sb nanowires grown by MOCVD for high speed phase change memories

Micro and Nano Engineering, 2019
We investigated the Phase Change Memory (PCM) capabilities of In-doped Sb nanowires (NWs) with diameters of (20-40) nm, which were self-assembled by Metalorganic Chemical Vapor Deposition (MOCVD) via the vapor-liquid-solid (VLS) mechanism.
R. Cecchini, S. Selmo, C. Wiemer, M. Fanciulli, E. Rotunno, L. Lazzarini, M. Rigato, D. Pogany, A. Lugstein, M. Longo   +9 more
doaj   +1 more source

Paramagnetic GaN:Fe and ferromagnetic (Ga,Fe)N - relation between structural, electronic, and magnetic properties

, 2006
We report on the metalorganic chemical vapor deposition (MOCVD) of GaN:Fe and (Ga,Fe)N layers on c-sapphire substrates and their thorough characterization via high-resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), spatially ...
A. Bonanni, A. Bonanni, A. Polyakov, A. Zunger, Agnieszka Wolos, Alberta Bonanni, Andrea Navarro-Quezada, C. Liu, Clemens Simbrunner, F. Matsukura, Hanka Przybylińska, K. Maier, K. Sato, Maciej Sawicki, Martin Quast, Matthias Wegscheider, Michał Kiecana, N. Gajbhiye, Rafał Jakieła, S. Bishop, S. Kuwabara, S. Kuwabara, T. Dietl, T. Dietl, Tian Li, Tomasz Dietl, Wolfgang Jantsch, Z. Bougrioua   +27 more
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Relation between thickness, crystallite size and magnetoresistance of nanostructured La1−xSrxMnyO3±δ films for magnetic field sensors

Beilstein Journal of Nanotechnology, 2019
In the present study the advantageous pulsed-injection metal organic chemical vapour deposition (PI-MOCVD) technique was used for the growth of nanostructured La1−xSrxMnyO3±δ (LSMO) films on ceramic Al2O3 substrates.
Rasuole Lukose, Valentina Plausinaitiene, Milita Vagner, Nerija Zurauskiene, Skirmantas Kersulis, Virgaudas Kubilius, Karolis Motiejuitis, Birute Knasiene, Voitech Stankevic, Zita Saltyte, Martynas Skapas, Algirdas Selskis, Evaldas Naujalis   +12 more
doaj   +1 more source

Characterization of Nanosized Al2O3 Powder Synthesized by Thermal-Assisted MOCVD and Plasma-Assisted MOCVD [PDF]

Iranian Journal of Chemistry & Chemical Engineering, 2011
Nanosized Al2O3 powder is synthesized by thermal Metal Organic Chemical Vapor Deposition (MOCVD)combined withplasma. The effects of reaction temperature, pressure, Al(CH3)3 (TMA) concentration and reactant gases (CO2 and O2) on the characteristics of the
Han Shizhong, Chen Jinghui, Zheng Peng,, Qing Pang   +3 more
doaj  

P/N InP homojunction solar cells by LPE and MOCVD techniques [PDF]

P/N InP homojunction solar cells have been prepared by using both liquid phase epitaxy (LPE) and metallorganic chemical vapor deposition (MOCVD) growth techniques. A heavily doped p-In sub 0.53Ga sub 0.47As contacting layer was incorporated into the cell
Choi, K. Y., Miller, B. I., Shen, C. C.
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Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition [PDF]

A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, in which a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor ...
Nouhi, Akbar, Stirn, Richard J.
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Real‐Time Monitoring of 2D TMDC MOCVD: An In Situ Spectroscopic Reflectance Approach

Advanced Materials Interfaces
Metal–organic chemical vapor deposition (MOCVD) has become a well‐established technique to grow 2D transition metal dichalcogenide (TMDC) materials on large scale with high reproducibility.
Songyao Tang, Yibing Wang, Hleb Fiadziushkin, Yingfang Ding, Amir Ghiami, Michael Heuken, Andrei Vescan, Holger Kalisch   +7 more
doaj   +1 more source