MOCVD of hard metallurgical coatings: Examples in the Cr–C–N system [PDF]
, 2005 All individual phases of the ternary Cr–C–N system including stable and metastable ones can be deposited at low temperature by metalorganic chemical vapor deposition (MOCVD).
Aldrich-Smith +24 more
core +2 more sources
Al–Cu intermetallic coatings processed by sequential metalorganic chemical vapour deposition and post-deposition annealing [PDF]
, 2012 Sequential processing of aluminum and copper followed by reactive diffusion annealing is used as a paradigm for the metalorganic chemical vapour deposition (MOCVD) of coatings containing intermetallic alloys.
Aloui, Lyacine +7 more
core +3 more sources
Effects of LP-MOCVD prepared TiO2 thin films on the in vitro behavior of gingival fibroblasts [PDF]
, 2011 We report on the in vitro response of human gingival fibroblasts (HGF-1 cell line) to various thin films of titanium dioxide (TiO2) deposited on titanium (Ti) substrates by low pressure metal-organic chemical vapor deposition (LP-MOCVD).
Cimpean, A. +3 more
core +2 more sources
Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates
Nanomaterials, 2022 An analytic model for III-V nanowire growth by metal organic chemical vapor deposition (MOCVD) in regular arrays on patterned substrates is presented. The model accounts for some new features that, to the author’s knowledge, have not yet been considered.
Vladimir G. Dubrovskii
doaj +1 more source
The biocompatibility of titanium in a buffer solution: compared effects of a thin film of TiO2 deposited by MOCVD and of collagen deposited from a gel [PDF]
, 2007 This study aims at evaluating the biocompatibility of titanium surfaces modified according two different ways: (i) deposition of a bio-inert, thin film of rutile TiO2 by chemical vapour deposition (MOCVD), and (ii) biochemical treatment with collagen gel,
Alain N. Gleizes +37 more
core +4 more sources
Cubic InGaN Grown by Mocvd [PDF]
MRS Proceedings, 1998 AbstractWe report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements.
J.B. Li +4 more
openaire +1 more source
Chemical vapour deposition and atomic layer deposition of amorphous and nanocrystalline metallic coatings: towards deposition of multimetallic films [PDF]
, 2009 This paper provides a prospective insight on chemical vapour deposition (CVD) and atomic layer deposition (ALD) as dry techniques for the processing of amorphous and nanocrystalline metallic thin films.
Blanquet, Elisabeth +3 more
core +5 more sources
Effects of Different InGaN/GaN Electron Emission Layers/Interlayers on Performance of a UV-A LED
Applied Sciences, 2020 In this study, we investigated the effects of InGaN/GaN-based interlayer (IL) and electron emitting layer (EEL) consisting of a GaN barrier layer grown with different metal-organic (MO) precursors of gallium (Ga), which were grown underneath the active ...
Dohyun Kim +5 more
doaj +1 more source
Scientific Reports, 2021 We investigated the process parameters of the high temperature MOCVD (HT-MOCVD) numerical model for the AlN growth based on CFD simulation using orthogonal test design.
Jiadai An +3 more
doaj +1 more source
Journal of Chemistry, 2014 The effect of the preparation method of monometallic Pd and Pt and bimetallic Pd-Pt/Al2O3-TiO2 catalysts on the hydrodesulfurization (HDS) of dibenzothiophene (DBT) was investigated in this study.
Reynaldo Martínez Guerrero +7 more
doaj +1 more source