Results 11 to 20 of about 2,771 (177)

Oxygen-Regulated GaN-Based Sensors Fabricated by MOCVD for Switchable Gas Detection: Exhaled Gas Smart Platform for Non-Invasive Disease Detection. [PDF]

open access: yesAdv Sci (Weinh)
This work presents highly consistent GaN‐based thin‐film gas sensors prepared by MOCVD for non‐invasive breath analysis. The sensors exhibit tunable selectivity from oxidizing to reducing gases by incorporating In composition, ultra‐low detection limits and humidity resistance.
Wang Y   +9 more
europepmc   +2 more sources

Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates

open access: yesNanomaterials, 2022
An analytic model for III-V nanowire growth by metal organic chemical vapor deposition (MOCVD) in regular arrays on patterned substrates is presented. The model accounts for some new features that, to the author’s knowledge, have not yet been considered.
Vladimir G. Dubrovskii
doaj   +1 more source

Cubic InGaN Grown by Mocvd [PDF]

open access: yesMRS Proceedings, 1998
AbstractWe report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements.
J.B. Li   +4 more
openaire   +1 more source

Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design

open access: yesScientific Reports, 2021
We investigated the process parameters of the high temperature MOCVD (HT-MOCVD) numerical model for the AlN growth based on CFD simulation using orthogonal test design.
Jiadai An   +3 more
doaj   +1 more source

Effects of Different InGaN/GaN Electron Emission Layers/Interlayers on Performance of a UV-A LED

open access: yesApplied Sciences, 2020
In this study, we investigated the effects of InGaN/GaN-based interlayer (IL) and electron emitting layer (EEL) consisting of a GaN barrier layer grown with different metal-organic (MO) precursors of gallium (Ga), which were grown underneath the active ...
Dohyun Kim   +5 more
doaj   +1 more source

Monometallic Pd and Pt and Bimetallic Pd-Pt/Al2O3-TiO2 for the HDS of DBT: Effect of the Pd and Pt Incorporation Method

open access: yesJournal of Chemistry, 2014
The effect of the preparation method of monometallic Pd and Pt and bimetallic Pd-Pt/Al2O3-TiO2 catalysts on the hydrodesulfurization (HDS) of dibenzothiophene (DBT) was investigated in this study.
Reynaldo Martínez Guerrero   +7 more
doaj   +1 more source

Realization of exciton-polariton condensation in GaAs-based microcavity grown by metalorganic chemical vapor deposition

open access: yesPhysical Review Research, 2022
Metalorganic chemical vapor deposition (MOCVD) has not been often used for studying exciton-polariton condensation and developing polaritonic devices, although it is a powerful mass productive method for practical applications.
Daegwang Choi   +4 more
doaj   +1 more source

MOCVD AND PLASMA MOCVD OF METAL OXIDE FILMS

open access: yesLe Journal de Physique Colloques, 1989
No abstract ...
Weglicki, P.   +4 more
openaire   +1 more source

An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth

open access: yesMaterials Research Express, 2021
An inductively coupled plasma metal organic chemical vapor deposition (ICP-MOCVD) based on showerhead structure is proposed for the low temperature growth of thin solid films including GaN.
Zixuan Zhang   +11 more
doaj   +1 more source

Sharp interfaces in p+-AlGaAs/n-GaAs epitaxial structures obtained by MOCVD

open access: yesTekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2014
The complexity of forming sharp and high-quality boundaries in p+AlGaAs/n-GaAs systems by MOCVD method is caused by differing on 80–120°С optimal crystallization temperature of GaAs layers and n-AlGaAs solid solutions.
N. M. Vakiv   +4 more
doaj   +1 more source

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