Results 31 to 40 of about 2,771 (177)

The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.

Тонкие химические технологии, 2009
The algorithm was worked out, witch allows to define obtained GaAs-based layers characteristics and the most significant epitaxy process technological parameters on the base of half-empiric dependences, if MOCVD process carriage conditions are known.
A. A. Marmalyuk, D. E. Arbenin, E. V. Burlyaeva   +2 more
doaj  

Controlling graphene work function by doping in a MOCVD reactor

Heliyon, 2018
Here we demonstrate a new method for doping graphene using Metal Organic Chemical Vapor Deposition (MOCVD) reactor. The original undoped graphene was of a very high quality mounted on Si/SiO2 substrates, they were then doped in the MOCVD's reactor using ...
Chen Klein, Doron Cohen-Elias, Gabby Sarusi   +2 more
doaj   +1 more source

Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition

APL Materials, 2020
The results of a detailed investigation of electrically active defects in metal-organic chemical vapor deposition (MOCVD)-grown β-Ga2O3 (010) epitaxial layers are described.
Hemant Ghadi, Joe F. McGlone, Christine M. Jackson, Esmat Farzana, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel   +8 more
doaj   +1 more source

Tunable Electronic and Optoelectronic Properties of MoS2 Through Molecular Coverage‐Controlled Polyoxometalate Doping

Advanced Electronic Materials, EarlyView.
Molecular charge transfer at the V12‐DyPc/MoS2 interface stabilizes trions, suppressing neutral A‐exciton emission and enabling controlled modulation of the A–‐trion population, bridging excitonic physics with polyoxometalate charge‐transport functionality.
Jean‐Pierre Glauber, Marco Moors, Dmitry A. Ryndyk, Emad Najafidehaghani, Jonas Lorenz, Rahel‐Manuela Maas, Nils Boysen, Harish Parala, Thomas Heine, Anjana Devi, Kirill Monakhov   +10 more
wiley   +1 more source

Achieving low sheet resistance in Si-doped AlN via low-temperature MOCVD

Applied Physics Express
A low-temperature (LT) metal-organic chemical vapor deposition (MOCVD) technique was developed for obtaining conductive Si-doped AlN thin films. An optimization of the deposition parameters, such as V/III ratio and trimethylaluminum flow rate, enabled ...
Swarnav Mukhopadhyay, Khush Gohel, Surjava Sanyal, Guangying Wang, Shubhra S. Pasayat   +4 more
doaj   +1 more source

Cross‐Modal Characterization of Thin‐Film MoS2 Using Generative Models

Advanced Intelligent Systems, EarlyView.
Cross‐modal learning is evaluated using atomic force microscopy (AFM), Raman spectroscopy, and photoluminescence spectroscopy (PL) through unsupervised learning, regression, and autoencoder models. Autoencoder models are used to generate spectroscopy data from the microscopy images.
Isaiah A. Moses, Chen Chen, Joan M. Redwing, Wesley F. Reinhart   +3 more
wiley   +1 more source

Metal–organic chemical vapor deposition of p-type NiO and NiO/β-Ga2O3 PN diodes [PDF]

APL Electronic Devices
In this work, p-type NiO thin films were grown on (010) β-Ga2O3 substrates via metal–organic chemical vapor deposition (MOCVD). The growth conditions, including Ni(dmamb)2 (Ni precursor) molar flow rate, oxygen flow rate, and growth temperature, were ...
Dong Su Yu, Lingyu Meng, Vijay Gopal Thirupakuzi Vangipuram, Christopher Chae, Jinwoo Hwang, Hongping Zhao   +5 more
doaj   +1 more source

Magnetron Sputtering Synthesis of La‐Doped BiFeO3 Thin Films and Enhanced Exchange Bias in CoFeB/Bi1‐xLaxFeO3 Heterostructures

Advanced Physics Research, EarlyView.
This study explores the epitaxial growth of high‐quality La‐doped BiFeO3 (BLFO) thin films at 550 °C using magnetron sputtering. The films exhibit good ferroelectric properties and low leakage current. A BLFO/CoFeB heterostructure is constructed, achieving an exchange bias field exceeding the coercive field at room temperature.
Zhiqin Zhou, Ligang Bai, Chen Qi, Xiaoyang Lin, Ivair Aparecido dos Santos, Gustavo Sanguino Dias, Luiz Fernanado Cótica, Weisheng Zhao, Yanxue Chen, Tianxiao Nie, Guodong Wei   +10 more
wiley   +1 more source

Chemical vapor deposition of Tm3Fe5O12 epitaxial films, investigation of their structure and properties in the terahertz range

Конденсированные среды и межфазные границы
In this study, for the search and development of new spintronic materials, thin films of Tm3Fe5O12 iron garnet were obtained by the metalorganic chemical vapor deposition (MOCVD) on single-crystal Gd3Ga5O12(111) – GGG and Y3Al5O12(111) – YAG substrates.
Maria N. Markelova, Abduvosit A. Hafizov, Xiaoyu Shi, Igor E. Graboy, Maxim S. Shanin, Maria R. Konnikova, Alexander P. Shkurinov, Andrey R. Kaul   +7 more
doaj   +1 more source

Ultra‐High Spin Hall Angle in Sputtered Sb2Te3 Topological Insulators via Pt Interfacial Engineering

Advanced Physics Research, EarlyView.
Topological insulator Sb2Te3 demonstrates exceptional charge‐to‐spin conversion efficiency and thermal stability up to 400°C, showing great promise for spin–orbit torque memory applications. This study achieves high‐quality Sb2Te3 films on silicon substrates through optimized sputtering and introduces an ultrathin Pt interlayer to suppress interfacial ...
Qi Zhang, Xu Liu, Meihong Liu, Yining Wang, Pengxiang Zhao, Hanyuan Guo, Baoshan Cui, Yalu Zuo, Xiaoxi Liu, Li Xi   +9 more
wiley   +1 more source