Results 31 to 40 of about 24,527 (216)

Sharp interfaces in p+-AlGaAs/n-GaAs epitaxial structures obtained by MOCVD

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2014
The complexity of forming sharp and high-quality boundaries in p+AlGaAs/n-GaAs systems by MOCVD method is caused by differing on 80–120°С optimal crystallization temperature of GaAs layers and n-AlGaAs solid solutions.
N. M. Vakiv, S. I. Krukovskii, S. Yu. Larkin, A. Yu. Avksent'ev, R. S. Krukovskii   +4 more
doaj   +1 more source

An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth

Materials Research Express, 2021
An inductively coupled plasma metal organic chemical vapor deposition (ICP-MOCVD) based on showerhead structure is proposed for the low temperature growth of thin solid films including GaN.
Zixuan Zhang, Yi Luo, Jiadong Yu, Xiang Li, Jian Wang, Wangyang Yu, Lai Wang, Zhibiao Hao, Changzheng Sun, Yanjun Han, Bing Xiong, Hongtao Li   +11 more
doaj   +1 more source

Thermal behaviour of CpCuPEt3 in gas phase and Cu thin films processing [PDF]

, 2007
Decomposition of CpCuPEt3 (Cp=NNN(η5-C5H5)) and MOCVD of Cu films from CpCuPEt3 have been investigated in the frame of an ongoing project on the processing of Cu-containing coatings.
Gleizes, Alain, Krisyuk, Vladislav V., Patil, Urmila, Prud’homme, Nathalie, Samélor, Diane, Senocq, François, Turgambaeva, Asiya E., Vahlas, Constantin   +7 more
core   +4 more sources

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

AIP Advances, 2022
The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth
Daniela Gogova, Misagh Ghezellou, Dat Q. Tran, Steffen Richter, Alexis Papamichail, Jawad ul Hassan, Axel R. Persson, Per O. Å. Persson, Olof Kordina, Bo Monemar, Matthew Hilfiker, Mathias Schubert, Plamen P. Paskov, Vanya Darakchieva   +13 more
doaj   +1 more source

Electron diffusion length and lifetime in p-type GaN [PDF]

, 1998
We report on electron beam induced current and current–voltage (I–V) measurements on Schottky diodes on p-type doped GaN layers grown by metal organic chemical vapor deposition.
Bandić, Z. Z., Bridger, P. M., McGill, T. C., Piquette, E. C.   +3 more
core   +1 more source

Direct hard X-ray photodetector with superior sensitivity based on ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition

Materials Today Advances, 2023
In this work, we have fabricated a highly sensitive direct irradiating X-ray photodetector (DXPD) based on Zinc Gallium Oxide (ZnGa2O4) epilayers with a metal-semiconductor-metal structure. The ZnGa2O4 epilayers were grown on a c-plane sapphire substrate
Siddharth Rana, Shang-Jui Chiu, Chih-Yang Huang, Fu-Gow Tairtan, Yan-Gu Lin, Dong-Sing Wuu, Jitendra Pratap Singh, Guang-Cheng Su, Po-Liang Liu, Ray-Hua Horng   +9 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Nanocrystalline chromium-based coatings deposited by DLI-MOCVD under atmospheric pressure from Cr(CO)6 [PDF]

, 2006
Nanocrystalline original Cr-based coatings were grown under atmospheric pressure by Direct Liquid Injection Metal Organic Chemical Vapor Deposition (DLI-MOCVD).
Douard, Aurélia, Maury, Francis
core   +2 more sources

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source