Results 41 to 50 of about 24,527 (216)

High‐Gain Ag2Te/MoS2 Hybrid Photodetectors for Short‐Wave Infrared Imaging

Advanced Materials, EarlyView.
A precision‐engineered short‐wave infrared image sensor based on a 0D/2D Ag2Te/MoS2 hybrid structure is demonstrated in this work. The device exploits photodoping at the nanoscale interface to achieve broadband detection from visible to infrared wavelengths with high responsivity and fast response.
Seock‐Jin Jeong, Hyun Woo Ko, Suyeon Jo, Joicy Selvaraj, Jung‐Min Kim, Namji Lee, Jae‐Hyeon Ahn, Hyeonchae Lee, Seungmin Jeong, Heedae Kim, Paul Hongsuck Seo, Jae Won Shim, Yonghun Kim, Hyun‐Soo Ra, Min‐Chul Park, Jong‐Soo Lee   +15 more
wiley   +1 more source

Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping

Applied Physics Express
In this paper we describe a pulsed metalorganic chemical vapor deposition (MOCVD) Si-doping approach for AlN epilayers over bulk AlN. The Al-rich growth/doping conditions in the pulsed MOCVD process resulted in n-AlN layers with transmission line model ...
Tariq Jamil, Abdullah Al Mamun Mazumder, Mafruda Rahman, Muhammad Ali, Jingyu Lin, Hongxing Jiang, Grigory Simin, Asif Khan   +7 more
doaj   +1 more source

MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

International Journal of Photoenergy, 2014
We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application.
Amornrat Limmanee, Patipan Krudtad, Sasiwimon Songtrai, Suttinan Jaroensathainchok, Taweewat Krajangsang, Jaran Sritharathikhun, Kobsak Sriprapha   +6 more
doaj   +1 more source

Investigation of Structural, Mechanical and Electrochemical Properties of Temperature‐Dependent Dual AlN/TiAlN Coating Synthesized by CVD Process

Advanced Materials Interfaces, EarlyView.
This study investigates thermally CVD‐deposited AlN/TiAlN dual‐layer coatings over a Si substrate, focusing on the temperature‐dependent process‐structure relationship. Systematic characterization reveals that a dense AlN interlayer combined with an optimally deposited TiAlN top layer provides enhancement in mechanical strength, tribological stability,
Soham Das, Abhishek Kundu, Debjyoti Sahu, Nikhil Kumar, Spandan Guha   +4 more
wiley   +1 more source

Elastic and inelastic tunneling characteristics of AIAs/GaAs heterojunctions [PDF]

, 1984
N/
Burnham, R. D., Collins, R. T., Lambe, J., McGill, T. C.   +3 more
core  

The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.

Тонкие химические технологии, 2009
The algorithm was worked out, witch allows to define obtained GaAs-based layers characteristics and the most significant epitaxy process technological parameters on the base of half-empiric dependences, if MOCVD process carriage conditions are known.
A. A. Marmalyuk, D. E. Arbenin, E. V. Burlyaeva   +2 more
doaj  

Metal–organic chemical vapor deposition of 2D van der Waals materials—The challenges and the extensive future opportunities

APL Materials, 2020
The last decade has witnessed significant progress in two-dimensional van der Waals (2D vdW) materials research; however, a number of challenges remain for their practical applications.
Do Hee Lee, Yeoseon Sim, Jaewon Wang, Soon-Yong Kwon   +3 more
doaj   +1 more source

Wafer‐Scale Single‐Crystal Boron Nitride: Synthesis and Integration in 2D Electronics

Advanced Materials Interfaces, EarlyView.
This Review highlights recent breakthroughs in wafer‐scale hBN synthesis and its integration into next‐generation 2D electronics. We analyze growth kinetics, epitaxial strategies, and stacking‐sequence control while correlating material quality with device performance.
Jaewon Wang, Soon‐Yong Kwon
wiley   +1 more source

Achieving low sheet resistance in Si-doped AlN via low-temperature MOCVD

Applied Physics Express
A low-temperature (LT) metal-organic chemical vapor deposition (MOCVD) technique was developed for obtaining conductive Si-doped AlN thin films. An optimization of the deposition parameters, such as V/III ratio and trimethylaluminum flow rate, enabled ...
Swarnav Mukhopadhyay, Khush Gohel, Surjava Sanyal, Guangying Wang, Shubhra S. Pasayat   +4 more
doaj   +1 more source

Controlling graphene work function by doping in a MOCVD reactor

Heliyon, 2018
Here we demonstrate a new method for doping graphene using Metal Organic Chemical Vapor Deposition (MOCVD) reactor. The original undoped graphene was of a very high quality mounted on Si/SiO2 substrates, they were then doped in the MOCVD's reactor using ...
Chen Klein, Doron Cohen-Elias, Gabby Sarusi   +2 more
doaj   +1 more source