Results 51 to 60 of about 2,771 (177)
Development and Research of the MOCVD Cleaning Robot
MachinesWith the wide application of the gallium nitride (GaN) preparation method based on Metal–Organic Chemical Vapor Deposition (MOCVD), the automation of MOCVD equipment has become a research hotspot.
Yibo Ren, Zengwen Dong
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AIP Advances, 2015 This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared ...
Takeshi Aoki +5 more
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Rare Metals, EarlyView.ABSTRACT The transformative potential of gallium nitride high electron mobility transistors (GaN HEMTs) in advancing carbon‐neutral power systems remains bottlenecked by contact resistance (Rc) at the metal–semiconductor (M‐S) interface, a critical determinant of switching losses and frequency response.
Ji‐Zhou Zhang +8 more
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Scientific Reports, 2020 Since AlGaN offers new opportunities for the development of the solid state ultraviolet (UV) luminescence, detectors and high-power electronic devices, the growth of AlN buffer substrate is concerned.
Jiadai An +4 more
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Rare Metals, EarlyView.ABSTRACT Photodetectors, based on GaAs nanowires (NWs), hold significant promise in the fields of high integration micro‐ and nano‐optoelectronics applications because of their outstanding electronic and optical properties. To date, significant efforts have been directed toward enhancing the performance of photodetectors, aiming for high detectivity ...
Yu Hao +11 more
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Rare Metals, EarlyView.ABSTRACT The Schottky barrier height (SBH), which serves as a pivotal determinant of charge carrier injection efficiency in electronic devices, critically governs electrical behavior at metal/semiconductor interfaces. However, pronounced metal‐induced gap states at metal contact interfaces induce Fermi‐level pinning, which constrains the ...
Xiaofei Liu +10 more
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Materials Research Letters, 2018 We report on the self-assembly of core–shell Ge/In–Te nanowires (NWs) on single crystal Si substrates by Metalorganic Chemical Vapour Deposition (MOCVD), coupled to the Vapour–Liquid–Solid (VLS) mechanism, catalysed by Au nanoparticles (NPs). The NWs are
Raimondo Cecchini +7 more
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Low Temperature MOCVD Synthesis of High‐Mobility 2D InSe
Small, EarlyView.We report on the low‐temperature, wafer‐scale metal‐organic chemical vapor deposition (MOCVD) growth of phase‐pure two‐dimensional indium selenide (InSe). By adjusting the Se/In ratio and temperature, we mapped In‐rich to Se‐rich InxSey phase space and identified the conditions that produce epitaxial, layered InSe. Structural and spectroscopic analyses
Robin Günkel +17 more
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1D and 3D Carbon Nanomaterials Derived from Zeolite‐Based Catalysts: Synthesis and Applications
Small Structures, EarlyView.Zeolites act as catalysts or catalytic templates to synthesize 1D and 3D carbon nanomaterials with uniform structures, enabled by their high surface area and uniform porous frameworks. The resulting carbon nanomaterials possess excellent surface area and electronic conductivity, supporting their use in energy storage, catalysis, electronics, gas ...
Kulika Pithaksinsakul +3 more
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