Results 51 to 60 of about 24,527 (216)

Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition

open access: yesAPL Materials, 2020
The results of a detailed investigation of electrically active defects in metal-organic chemical vapor deposition (MOCVD)-grown β-Ga2O3 (010) epitaxial layers are described.
Hemant Ghadi   +8 more
doaj   +1 more source

High‐Throughput Screening of REBCO Superconducting Thin Films Fabricated Via Combinatorial Inkjet Printing and TLAG Process

open access: yesAdvanced Materials Technologies, EarlyView.
A methodological framework is presented for combinatorial REBCO thin films fabricated by drop‐on‐demand inkjet printing with controlled Rare Earth composition gradients. Automated, synchrotron‐based, and local characterization techniques produce comprehensive property maps that correlate composition and TLAG process parameters with superconducting ...
Emma Ghiara   +15 more
wiley   +1 more source

Characterization of highly-oriented ferroelectric Pb_xBa_(1-x)TiO_3 [PDF]

open access: yes, 2005
Pb_xBa_(1-x)TiO_3 (0.2 ≾ x ≾ 1) thin films were deposited on single-crystal MgO as well as amorphous Si_3N_4/Si substrates using biaxially textured MgO buffer templates, grown by ion beam-assisted deposition (IBAD).
Boyd, David A.   +2 more
core  

Controlled MOCVD growth of Bi2Se3 topological insulator nanoribbons

open access: yes, 2012
Topological insulators are a new class of materials that support topologically protected electronic surface states. Potential applications of the surface states in low dissipation electronic devices have motivated efforts to create nanoscale samples with
J R Petta   +6 more
core   +1 more source

Polarity in GaN and ZnO: Theory, measurement, growth, and devices [PDF]

open access: yes, 2016
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Rev.
Akyol F.   +65 more
core   +3 more sources

Multi‐Dielectric Metasurfaces for Ultrabright, Tunable Structural Color and Reconfigurable Optical Filtering with Extraordinarily Large Color Span

open access: yesAdvanced Optical Materials, EarlyView.
Structural color generation is an emerging field for digital display and printing applications. This report presents a novel truncated‐cone design and the first use of GaP sandwiched between two layers of TiO2, demonstrating ultra‐bright, tunable colors with a record color gamut.
Md Rumon Miah   +2 more
wiley   +1 more source

Chemical vapor deposition of Tm3Fe5O12 epitaxial films, investigation of their structure and properties in the terahertz range

open access: yesКонденсированные среды и межфазные границы
In this study, for the search and development of new spintronic materials, thin films of Tm3Fe5O12 iron garnet were obtained by the metalorganic chemical vapor deposition (MOCVD) on single-crystal Gd3Ga5O12(111) – GGG and Y3Al5O12(111) – YAG substrates.
Maria N. Markelova   +7 more
doaj   +1 more source

Engineered Strain in 2D Materials by Direct Growth on Deterministically Patterned Grayscale Topographies

open access: yesAdvanced Science, EarlyView.
ABSTRACT Strain is a proven technique for modifying the bandgap and enhancing carrier mobility in 2D materials. Most current strain engineering techniques rely on the post‐growth transfer of these atomically thin materials from growth substrates to target surfaces, limiting their integration into nanoelectronics.
Berke Erbas   +8 more
wiley   +1 more source

A feasibility study towards ultra-thin PV solar cell devices by MOCDV based on a p-i-n structure incorporating pyrite [PDF]

open access: yes, 2010
FeSx layers were deposited onto aluminosilicate glass substrates over a temperature range of 180°C to 500°C using a horizontal AP-MOCVD reactor. Fe(CO)5 was used as the Fe source in combination with t-Bu2S2 or t-BuSH as S precursor to control the rate of
Barrioz, Vincent   +5 more
core  

N-doped TiO2 coatings grown by atmospheric pressure MOCVD for visible light-induced photocatalytic activity [PDF]

open access: yes, 2007
N-doped TiO2 films were deposited by atmospheric pressure CVD from titanium tetra-isopropoxide (TTIP) and N2H4 as reactive gas in the temperature range 400–500 °C on various substrates.
Duminica, Florin-Daniel   +2 more
core   +3 more sources

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