Results 61 to 70 of about 2,771 (177)

Highly conformal and high-ionic conductivity thin-film electrolyte for 3D-structured micro batteries: Characterization of LiPON film deposited by MOCVD method

AIP Advances, 2017
This paper reports a lithium phosphorus oxynitride (LiPON) thin-film electrolyte deposited using a metalorganic-chemical vapor deposition (MOCVD) method for 3D-structured micro batteries.
Takashi Fujibayashi, Yusuke Kubota, Katsuhiko Iwabuchi, Naoki Yoshii   +3 more
doaj   +1 more source

Engineered surface strategies to manage dental implant‐related infections

Periodontology 2000, EarlyView.
Abstract When exposed to the oral environment, dental implants, like natural surfaces, become substrates for microbial adhesion and accumulation, often leading to implant‐related infections—one of the main causes of implant failure. These failures impose significant costs on patients, clinicians, and healthcare systems.
João Gabriel S. Souza, Bruna E. Nagay, Rodrigo Martins, Martinna Bertolini, Jamil A. Shibli, Conrado Aparicio, Magda Feres, Valentim A. R. Barão   +7 more
wiley   +1 more source

Emerging 2D Materials and Their Hybrid Nanostructures for Label‐Free Optical Biosensing: Recent Progress and Outlook

Advanced Functional Materials, Volume 36, Issue 11, 5 February 2026.
This review highlights recent advances in label‐free optical biosensors based on 2D materials and rationally designed mixed‐dimensional nanohybrids, emphasizing their synergistic effects and novel functionalities. It also discusses multifunctional sensing platforms and the integration of machine learning for intelligent data analysis.
Xinyi Li, Yonghao Fu, Yuehe Lin, Dan Du
wiley   +1 more source

Toward ferroelectric AlN/GaN heterostructures and sputtered III-N thin films with metal organic chemical vapor deposition-like texture

Communications Materials
Merging III-N-technology and wurtzite ferroelectricity could enable novel devices with enhanced functionality, for instance, harsh environment ferroelectric non-volatile memories and neuromorphic components.
Georg Schönweger, Niklas Wolff, Md Redwanul Islam, Isabel Streicher, Stefano Leone, Lorenz Kienle, Simon Fichtner   +6 more
doaj   +1 more source

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN

Nanomaterials, 2018
Yellow luminescence (YL) of unintentionally doped GaN (u-GaN) peaking at about 2.2 eV has been investigated for decades, but its origin still remains controversial. In this study, ten u-GaN samples grown via metalorganic chemical vapor deposition (MOCVD)
Feng Liang, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Ping Chen, Jing Yang, Shuangtao Liu, Yao Xing, Liqun Zhang, Mo Li, Yuantao Zhang, Guotong Du   +12 more
doaj   +1 more source

Phonons in Single‐Domain κ‐Ga2O3 Studied by Polarization Angle‐Resolved Raman Scattering

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Single‐domain κ‐Ga2O3 is systematically studied using advanced Raman spectroscopy, revealing over 100 Raman‐active phonon modes. These modes are compared with theoretical predictions and organized within a newly established nomenclature, offering a robust reference for future research.
Alwin Wüthrich, Benjamin M. Janzen, Roland Gillen, Hans Tornatzky, Andrea Ardenghi, Oliver Bierwagen, Anna Sacchi, Piero Mazzolini, Maximilian Ries, Temma Ogawa, Hiroyuki Nishinaka, Markus R. Wagner   +11 more
wiley   +1 more source

Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
In this study, a nitride ferroelectric domain wall memory (FeDMEM) device with potential for scalable integration into conventional CMOS technology is demonstrated. The novel domain wall conduction phenomena and its reflection in the memristive response of fiber‐textured Pt/Al0.72Sc0.28N(20 nm)/Pt capacitors is examined, revealing high read currents ...
Georg Schönweger, Deik Dasenbrook, Niklas Kyoushi, Roberto Guido, Adrian Petraru, Thomas Mikolajick, Uwe Schröder, Hermann Kohlstedt, Simon Fichtner   +8 more
wiley   +1 more source

Effect of Gate Length Relative to Recess Coverage on the Performance of Enhancement‐Mode β‐Ga2O3 MOSFETs

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Gate‐length engineering in recessed‐gate enhancement‐mode β‐Ga2O3 metal‐oxide‐semiconductor filed effect transistors was investigated by extending the gate to fully cover the etched recess. Complete recess coverage improves electrostatic control, reduces series resistance, shifts the threshold voltage positively, and enhances mobility, on‐resistance ...
Ching‐Hsuan Lee, Sheng‐Ti Chung, Siddharth Rana, Chien‐Nan Hsiao, Tejender Singh Rawat, Yi‐Kai Hsiao, Hao‐Chung Kuo, Ray‐Hua Horng   +7 more
wiley   +1 more source

MOCVD of Cobalt Oxide Using Co-Actylacetonate As Precursor: Thin Film Deposition and Study of Physical Properties [PDF]

Журнал нано- та електронної фізики, 2011
Metal Organic Chemical Vapor Deposition (MOCVD) is the deposition method of choice for achieving conformal uniform (composition and thickness) continuous thin films over the micron geometry topology necessary for implementing advanced devices. Thin films
S.M. Jogade, P.S. Joshi, B.N. Jamadar, D.S. Sutrave   +3 more
doaj  

In-doped Sb nanowires grown by MOCVD for high speed phase change memories

Micro and Nano Engineering, 2019
We investigated the Phase Change Memory (PCM) capabilities of In-doped Sb nanowires (NWs) with diameters of (20-40) nm, which were self-assembled by Metalorganic Chemical Vapor Deposition (MOCVD) via the vapor-liquid-solid (VLS) mechanism.
R. Cecchini, S. Selmo, C. Wiemer, M. Fanciulli, E. Rotunno, L. Lazzarini, M. Rigato, D. Pogany, A. Lugstein, M. Longo   +9 more
doaj   +1 more source