Results 61 to 70 of about 24,527 (216)

Metal–organic chemical vapor deposition of p-type NiO and NiO/β-Ga2O3 PN diodes [PDF]

APL Electronic Devices
In this work, p-type NiO thin films were grown on (010) β-Ga2O3 substrates via metal–organic chemical vapor deposition (MOCVD). The growth conditions, including Ni(dmamb)2 (Ni precursor) molar flow rate, oxygen flow rate, and growth temperature, were ...
Dong Su Yu, Lingyu Meng, Vijay Gopal Thirupakuzi Vangipuram, Christopher Chae, Jinwoo Hwang, Hongping Zhao   +5 more
doaj   +1 more source

Phase‐Selective MOCVD of Orthorhombic Ferroelectric Gallium Oxide: Temperature‐Pressure Control of Phase Stability, Crystallinity, and Ferroelectricity for Memristor Applications

Advanced Electronic Materials, EarlyView.
A quantitative temperature–pressure phase map for MOCVD‐grown ferroelectric ε(κ)‐Ga2O3 is established, identifying a narrow stability window (560–590°C, 7‐23 Torr) governed by an Ostwald step rule pathway and a critical growth‐rate threshold of ∼11–12 nm/min. Optimized films achieve a 2.1% oxygen‐vacancy fraction, 60 nC/cm2 switchable polarization, and
Po‐Kai Kung, Hsin‐Yu Chou, Wei‐Hsiang Chiang, Anoop Kumar Singh, Wen‐Hao Lee, Tung‐Han Wu, Po‐Liang Liu, Ying‐Hao Chu, Dong‐Sing Wuu   +8 more
wiley   +1 more source

Growth of TiO2 thin films by AP-MOCVD on stainless steel substrates for photocatalytic applications [PDF]

, 2007
TiO2 thin films were deposited under atmospheric pressure by MOCVD in the temperature range 400–600 °C on stainless steel and Si(100) substrates. Titanium tetraisopropoxide (TTIP) was used as Ti and O source.
Duminica, Florin-Daniel, Hausbrand, R., Maury, Francis   +2 more
core   +4 more sources

31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

E3S Web of Conferences, 2017
We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes.
Campesato Roberta, Tukiainen Antti, Aho Arto, Gori Gabriele, Isoaho Riku, Greco Erminio, Guina Mircea   +6 more
doaj   +1 more source

Wafer‐Scale Bi2O2Se‐on‐Insulator Thin Films for Integrated Electronics

Advanced Electronic Materials, EarlyView.
Wafer‐scale, thickness‐controlled semiconducting Bi2O2Se thin films were grown on 2‐inch insulating sapphire substrates via magnetron sputtering using quasi‐van der Waals epitaxy. The uniform films enable large‐scale fabrication of top‐gated TFT arrays with stable enhancement‐mode operation and functional inverter, NAND, and NOR logic gates.
Xi Chen, Penghao Lv, Xintao Yin, Guizhou Xu, Feng Xu   +4 more
wiley   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Residual Stress Mechanisms in Aluminum Oxide Films Grown by MOCVD [PDF]

, 2009
Residual stresses in amorphous aluminium oxide films were investigated with in situ wafer curvature measurements. The films were deposited from aluminium tri-isopropoxide, on sapphire substrates.
Gleizes, Alain, Samélor, Diane, Sheldon, Brian W., Soni, Sumit K., Vahlas, Constantin   +4 more
core   +2 more sources

Magnetron Sputtering Synthesis of La‐Doped BiFeO3 Thin Films and Enhanced Exchange Bias in CoFeB/Bi1‐xLaxFeO3 Heterostructures

Advanced Physics Research, EarlyView.
This study explores the epitaxial growth of high‐quality La‐doped BiFeO3 (BLFO) thin films at 550 °C using magnetron sputtering. The films exhibit good ferroelectric properties and low leakage current. A BLFO/CoFeB heterostructure is constructed, achieving an exchange bias field exceeding the coercive field at room temperature.
Zhiqin Zhou, Ligang Bai, Chen Qi, Xiaoyang Lin, Ivair Aparecido dos Santos, Gustavo Sanguino Dias, Luiz Fernanado Cótica, Weisheng Zhao, Yanxue Chen, Tianxiao Nie, Guodong Wei   +10 more
wiley   +1 more source

Role of hydrogen carrier gas on the growth of few layer hexagonal boron nitrides by metal-organic chemical vapor deposition

AIP Advances, 2017
Few layer hexagonal boron nitride (h-BN) films were grown on 2-inch sapphire substrates by using metal-organic chemical vapor deposition (MOCVD) with two different carrier gases, hydrogen (H2) and nitrogen (N2 ...
Dong Yeong Kim, Nam Han, Hokyeong Jeong, Jaewon Kim, Sunyong Hwang, Jong Kyu Kim   +5 more
doaj   +1 more source

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Light: Science & Applications, 2022
A desorption-tailoring strategy is demonstrated to steadily prepare self-assembled p-AlGaN superlattices with sub-nanometer ultrathin barriers by MOCVD, which juggle the hole concentration and transport.
Jiaming Wang, Mingxing Wang, Fujun Xu, Baiyin Liu, Jing Lang, Na Zhang, Xiangning Kang, Zhixin Qin, Xuelin Yang, Xinqiang Wang, Weikun Ge, Bo Shen   +11 more
doaj   +1 more source