Results 71 to 80 of about 2,771 (177)

Emcore's MOCVD production seminar

III-Vs Review, 2003
AbstractThis year’s International Conference on Nitride Semiconductors (ICNS-5) saw a gathering of GaN experts discussing their work. Representatives from companies and Japanese universities specialising in nitride production attended a series of lectures providing insight into research and commercial developments in GaN processing.This is a short news
openaire   +1 more source

Exploring the Application of Gold‐Assisted Exfoliation in Large‐scale Integration of n‐Type and p‐Type 2D‐FETs

Small Methods, Volume 10, Issue 3, 9 February 2026.
This work demonstrates gold‐assisted mechanical exfoliation as an effective method for obtaining large‐area monolayers of MoS2 and WSe2. Over 200 FETs are fabricated, providing the largest statistical dataset for devices produced by this technique and the first including p‐FETs.
Małgorzata Giza, Krishnendu Mukhopadhyay, Harikrishnan Ravichandran, Andrew Pannone, Subir Ghosh, Saptarshi Das   +5 more
wiley   +1 more source

VN Thin Films via MOCVD Using a New Vanadium Precursor: Linking Growth Chemistry to Functional Surface Properties

Small Methods, Volume 10, Issue 3, 9 February 2026.
A new vanadium precursor enables metalorganic chemical vapor deposition growth of pure and crystalline VN thin films with tailored orientation. Combined experiments and density functional theory calculations reveal the crucial role of NH3 in controlling decomposition pathways and film characteristics.
Jean‐Pierre Glauber, Julian Lorenz, Ji Liu, Marietta Seifert, Volker Hoffmann, Carlos Abad, Detlef Rogalla, Lars Giebeler, Corinna Harms, Michael Wark, Michael Nolan, Anjana Devi   +11 more
wiley   +1 more source

Relation between thickness, crystallite size and magnetoresistance of nanostructured La1−xSrxMnyO3±δ films for magnetic field sensors

Beilstein Journal of Nanotechnology, 2019
In the present study the advantageous pulsed-injection metal organic chemical vapour deposition (PI-MOCVD) technique was used for the growth of nanostructured La1−xSrxMnyO3±δ (LSMO) films on ceramic Al2O3 substrates.
Rasuole Lukose, Valentina Plausinaitiene, Milita Vagner, Nerija Zurauskiene, Skirmantas Kersulis, Virgaudas Kubilius, Karolis Motiejuitis, Birute Knasiene, Voitech Stankevic, Zita Saltyte, Martynas Skapas, Algirdas Selskis, Evaldas Naujalis   +12 more
doaj   +1 more source

Characterization of Nanosized Al2O3 Powder Synthesized by Thermal-Assisted MOCVD and Plasma-Assisted MOCVD [PDF]

Iranian Journal of Chemistry & Chemical Engineering, 2011
Nanosized Al2O3 powder is synthesized by thermal Metal Organic Chemical Vapor Deposition (MOCVD)combined withplasma. The effects of reaction temperature, pressure, Al(CH3)3 (TMA) concentration and reactant gases (CO2 and O2) on the characteristics of the
Han Shizhong, Chen Jinghui, Zheng Peng,, Qing Pang   +3 more
doaj  

Over 15 MA/cm2 of critical current density in 4.8 µm thick, Zr-doped (Gd,Y)Ba2Cu3Ox superconductor at 30 K, 3T

Scientific Reports, 2018
An Advanced MOCVD (A-MOCVD) reactor was used to deposit 4.8 µm thick (Gd,Y)BaCuO tapes with 15 mol% Zr addition in a single pass. A record-high critical current density (J c ) of 15.11 MA/cm2 has been measured over a bridge at 30 K, 3T, corresponding to ...
Goran Majkic, Rudra Pratap, Aixia Xu, Eduard Galstyan, Venkat Selvamanickam   +4 more
doaj   +1 more source

Real‐Time Monitoring of 2D TMDC MOCVD: An In Situ Spectroscopic Reflectance Approach

Advanced Materials Interfaces
Metal–organic chemical vapor deposition (MOCVD) has become a well‐established technique to grow 2D transition metal dichalcogenide (TMDC) materials on large scale with high reproducibility.
Songyao Tang, Yibing Wang, Hleb Fiadziushkin, Yingfang Ding, Amir Ghiami, Michael Heuken, Andrei Vescan, Holger Kalisch   +7 more
doaj   +1 more source

长波长量子阱LD的实用化研究

Guangtongxin yanjiu, 1995
长波长量子阱ＬＤ的实用化研究李同宁，刘涛，金锦炎，丁国庆，郭建委，胡常炎，吴桐，李明娟，赵俊英，魏泽民（武汉电信器件公司）近十年来，ＭＢＥ、ＭＯＣＶＤ、ＣＢＥ工艺研究在半导体超薄层材料制备行业中非常活跃。国际上长波长多量子阱激光器件多采用ＭＯＣＶＤ工...
李同宁, 刘涛, 金锦炎, 丁国庆, 郭建委, 胡常炎, 吴桐, 李明娟, 赵俊英, 魏泽民   +9 more
doaj  

The estimation of possibility of the using gas mixer for obtaining sharper MOCVD grown heterojunctions

Тонкие химические технологии, 2014
In this paper, we investigate the possibility of using gas mixer precursor for MOCVD to get sharper heterojunctions InxGa1-xAs, InxGa1-xAs и InxAl1-xAs.
A. A. Gorskiy
doaj  

Evolution of the Electronic Gap of Directly Synthesized Versus Mechanically Transferred WS2 Monolayer to Multilayer Films

Advanced Materials Interfaces
The electronic properties of 2D materials play a critical role in determining their potential for device applications. Despite rapid developments in 2D semiconductors, studies of fundamental electronic parameters, including the electronic gap and ...
Xu He, Jinpeng Tian, Wenjing Wu, Satya Butler, Shengxi Huang, Saien Xie, Antoine Kahn   +6 more
doaj   +1 more source