Results 71 to 80 of about 24,527 (216)
Monolithic Integration of ScAlN Modulators on Silicon‐On‐Insulator Platform
Laser &Photonics Reviews, EarlyView.Monolithic integration of scandium‐doped aluminum nitride (ScAlN) modulators on a silicon‐on‐insulator platform is reported. A multilayer electrode design enhances RF‐optical field overlap, enabling direct access to the diagonal electro‐optic coefficient and improved modulation efficiency.
Sihao Wang +6 more
wiley +1 more source
TiOxNy coatings grown by atmospheric pressure metal organic chemical vapor deposition [PDF]
, 2010 Titanium oxynitride coatings were deposited on various substrates by an original atmospheric pressure metal organic chemical vapor deposition (MOCVD) process using titanium tetra-iso-propoxide as titanium and oxygen precursors and hydrazine as a nitrogen
Duminica, Florin-Daniel, Maury, Francis
core +4 more sources
physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi +8 more
wiley +1 more source
MOCVD Growth of Next-Generation III–V Semiconductor Devices: In Review
PhotonicsMetal–organic chemical vapor deposition (MOCVD) is a crystal growth technique used to achieve high-purity thin films, especially III–V materials, for fabricating semiconductor devices.
Zoya Noor +5 more
doaj +1 more source
Small, EarlyView.High‐temperature reconstruction of c‐plane sapphire during MOCVD growth of MoS2 fundamentally alters the optical and electronic properties of MoS2 epilayer by introducing step‐edge driven interfacial charge transfer. Raman, PL, and KPFM reveal non‐uniform doping and strain in as‐grown films, whereas transferred layers show uniform optical and ...
Riccardo Torsi +8 more
wiley +1 more source
Deposition of tin oxide, iridium and iridium oxide films by metal-organic chemical vapor deposition for electrochemical wastewater treatment [PDF]
, 2008 In this research, the specific electrodes were prepared by metal-organic chemical vapor deposition (MOCVD) in a hot-wall CVD reactor with the presence of O2 under reduced pressure.
A Fernandes +30 more
core +2 more sources
Wafer‐Scale Self‐Limiting Epitaxy of Bernal‐Stacked Single‐Crystal Boron Nitride
Small, EarlyView.Wafer‐scale, single‐crystal Bernal‐stacked boron nitride (bBN) bilayers are grown by flow‐modulated MOCVD, where monoatomic Ni step edges on Ni(111) deterministically direct AB stacking. As an ultrathin interlayer, bBN suppresses interfacial scattering and enables robust, nonvolatile polarization switching in MoS2 channels, offering a scalable platform
Jaewon Wang +22 more
wiley +1 more source
Protective Alumina Coatings by Low Temperature Metalorganic Chemical Vapour Deposition [PDF]
, 2007 Alumina thin films were processed from aluminium tri-iso-propoxide in a horizontal, with N2 as a carrier gas, occasional addition of water in the gas phase, deposition temperature in the range 350-700°C, total pressure 0.67 kPa (2 kPa when water was used)
Alphonse, Pierre +5 more
core +1 more source
Development and Research of the MOCVD Cleaning Robot
MachinesWith the wide application of the gallium nitride (GaN) preparation method based on Metal–Organic Chemical Vapor Deposition (MOCVD), the automation of MOCVD equipment has become a research hotspot.
Yibo Ren, Zengwen Dong
doaj +1 more source
AIP Advances, 2015 This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared ...
Takeshi Aoki +5 more
doaj +1 more source