Results 1 to 10 of about 75,173 (277)
Molecular Beam Epitaxy of LiMnAs [PDF]
We report on the molecular beam epitaxy (MBE) growth of high crystalline quality LiMnAs. The introduction of a group-I alkali metal element Li with flux comparable to fluxes of Mn and As has not caused any apparent damage to the MBE system after as many ...
Cukr, M. +7 more
core +2 more sources
Growth of strontium ruthenate films by hybrid molecular beam epitaxy
We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen.
Patrick B. Marshall +3 more
doaj +3 more sources
The origin of the contrast appearing in STM images at the boundary between diverse ordered structures is studied using the example of two structures, (7 × 7)N and (8 × 8), formed in the system of a two-dimensional silicon nitride layer on the Si(111 ...
Vladimir Mansurov +5 more
doaj +1 more source
Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration
The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural ...
Mikhail O. Petrushkov +12 more
doaj +1 more source
Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots
In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods.
Demid S. Abramkin +10 more
doaj +1 more source
Temperature control is a critical aspect for the semiconductor material growth of the Molecular Beam Epitaxy system. The growth rate depends on the temperature of the beam source, and the quality of epi-layers heavily depends on the temperature of the ...
Guoqing Wu +4 more
doaj +1 more source
Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories
Non-volatile memories based on the flash architecture with self-assembled III–V quantum dots (SAQDs) used as a floating gate are one of the prospective directions for universal memories.
Demid S. Abramkin, Victor V. Atuchin
doaj +1 more source
Nature of contaminants introduced in silicon wafers during molecular beam epitaxy chamber annealing
Epitaxial monolithic III–V/Si tandem solar cells are one of the most promising technologies to be adopted by the industry after the efficiency of the current market dominating single junction silicon solar cell saturates at its fundamental limit.
Chuqi Yi +6 more
doaj +1 more source
Atomic layer epitaxy of kagome magnet Fe3Sn2 and Sn-modulated heterostructures
Magnetic materials with kagome crystal structure exhibit rich physics, such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or
Shuyu Cheng +6 more
doaj +1 more source
Molecular beam epitaxy of antiperovskite oxides
Antiperovskites, or inverse perovskites, have recently emerged as a material class with a plethora of promising electronic properties. This Perspective describes the molecular beam epitaxy (MBE) growth of oxide antiperovskites Sr3PbO and Sr3SnO.
H. Nakamura, D. Huang, H. Takagi
doaj +1 more source

